Academic Journal
Exploring High-Spin Color Centers in Wide Band Gap Semiconductors SiC: A Comprehensive Magnetic Resonance Investigation (EPR and ENDOR Analysis)
| العنوان: | Exploring High-Spin Color Centers in Wide Band Gap Semiconductors SiC: A Comprehensive Magnetic Resonance Investigation (EPR and ENDOR Analysis) |
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| المؤلفون: | Larisa Latypova, Fadis Murzakhanov, George Mamin, Margarita Sadovnikova, Hans Jurgen von Bardeleben, Julietta V. Rau, Marat Gafurov |
| المصدر: | Molecules, Vol 29, Iss 13, p 3033 (2024) |
| بيانات النشر: | MDPI AG, 2024. |
| سنة النشر: | 2024 |
| المجموعة: | LCC:Organic chemistry |
| مصطلحات موضوعية: | color centers, semiconductors, electron paramagnetic resonance, nitrogen-vacancy center, silicon carbide, electron–nuclear double resonance, Organic chemistry, QD241-441 |
| الوصف: | High-spin defects (color centers) in wide-gap semiconductors are considered as a basis for the implementation of quantum technologies due to the unique combination of their spin, optical, charge, and coherent properties. A silicon carbide (SiC) crystal can act as a matrix for a wide variety of optically active vacancy-type defects, which manifest themselves as single-photon sources or spin qubits. Among the defects, the nitrogen-vacancy centers (NV) are of particular importance. This paper is devoted to the application of the photoinduced electron paramagnetic resonance (EPR) and electron–nuclear double resonance (ENDOR) techniques at a high-frequency range (94 GHz) to obtain unique information about the nature and properties of NV defects in SiC crystal of the hexagonal 4H and 6H polytypes. Selective excitation by microwave and radio frequency pulses makes it possible to determine the microscopic structure of the color center, the zero-field splitting constant (D = 1.2–1.3 GHz), the phase coherence time (T2), and the values of hyperfine (≈1.1 MHz) and quadrupole (Cq ≈ 2.45 MHz) interactions and to define the isotropic (a = −1.2 MHz) and anisotropic (b = 10–20 kHz) contributions of the electron–nuclear interaction. The obtained data are essential for the implementation of the NV defects in SiC as quantum registers, enabling the optical initialization of the electron spin to establish spin–photon interfaces. Moreover, the combination of optical, microwave, and radio frequency resonant effects on spin centers within a SiC crystal shows the potential for employing pulse EPR and ENDOR sequences to implement protocols for quantum computing algorithms and gates. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 29133033 1420-3049 |
| Relation: | https://www.mdpi.com/1420-3049/29/13/3033; https://doaj.org/toc/1420-3049 |
| DOI: | 10.3390/molecules29133033 |
| URL الوصول: | https://doaj.org/article/3bf9d9a817c84cada400e15ce3457010 |
| رقم الانضمام: | edsdoj.3bf9d9a817c84cada400e15ce3457010 |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 29133033 14203049 |
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| DOI: | 10.3390/molecules29133033 |