التفاصيل البيبلوغرافية
| العنوان: |
Substrate Bias Stress Induced Kink Effect in GaN-on-Silicon High-Electron-Mobility Transistor |
| المؤلفون: |
Ramdas P. Khade, Sujan Sarkar, Ajay Shanbhag, Amitava DasGupta, Nandita DasGupta |
| المصدر: |
IEEE Journal of the Electron Devices Society, Vol 11, Pp 294-302 (2023) |
| بيانات النشر: |
IEEE, 2023. |
| سنة النشر: |
2023 |
| المجموعة: |
LCC:Electrical engineering. Electronics. Nuclear engineering |
| مصطلحات موضوعية: |
AlInN/GaN-on-Si HEMTs, kink effect, Si-substrate stress, buffer traps, drain current transient, Electrical engineering. Electronics. Nuclear engineering, TK1-9971 |
| الوصف: |
In this paper, kink effect observed in the output characteristics of the AlInN/GaN-on-Si high electron mobility transistor (HEMT) after subjecting the Si-substrate to positive/negative bias stress has been studied. The charge distribution in the different buffer layers of the wafer in the presence of different substrate-bias stress has been discussed in detail. It is concluded that the induced kink is due to the trapping/de-trapping of charge carriers through acceptor-like deep levels present in the GaN buffer layer. TCAD simulations have been performed to understand the electric-field distribution within the device layers, which is strongly related to the observed kink phenomenon. Two types of traps, acceptor-like (Ea1 = 0.52 eV) and donor-like (Ea2 = 0.44 eV), were extracted from temperature-dependent drain current transient analysis using back-gating experiment. It is concluded that a carbon-induced deep acceptor-like trap is responsible for the observed kink effect. |
| نوع الوثيقة: |
article |
| وصف الملف: |
electronic resource |
| اللغة: |
English |
| تدمد: |
2168-6734 |
| Relation: |
https://ieeexplore.ieee.org/document/10122951/; https://doaj.org/toc/2168-6734 |
| DOI: |
10.1109/JEDS.2023.3275277 |
| URL الوصول: |
https://doaj.org/article/c19c78361dc74771b4ce412633caa0fc |
| رقم الانضمام: |
edsdoj.19c78361dc74771b4ce412633caa0fc |
| قاعدة البيانات: |
Directory of Open Access Journals |