Academic Journal
Recent Advances in In-Memory Computing: Exploring Memristor and Memtransistor Arrays with 2D Materials
| العنوان: | Recent Advances in In-Memory Computing: Exploring Memristor and Memtransistor Arrays with 2D Materials |
|---|---|
| المؤلفون: | Hangbo Zhou, Sifan Li, Kah-Wee Ang, Yong-Wei Zhang |
| المصدر: | Nano-Micro Letters, Vol 16, Iss 1, Pp 1-30 (2024) |
| بيانات النشر: | SpringerOpen, 2024. |
| سنة النشر: | 2024 |
| المجموعة: | LCC:Technology |
| مصطلحات موضوعية: | 2D materials, Memristors, Memtransistors, Crossbar array, In-memory computing, Technology |
| الوصف: | Highlights State-of-the-art research on two-dimensional material-based memristive arrays is comprehensively reviewed. Critical steps in achieving in-memory computing are identified and highlighted, covering material selection, device performance analysis, and array structure design. Challenges in progressing from single-device characterization to array-level and system-level implementations are discussed, along with proposed solutions. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 2311-6706 2150-5551 |
| Relation: | https://doaj.org/toc/2311-6706; https://doaj.org/toc/2150-5551 |
| DOI: | 10.1007/s40820-024-01335-2 |
| URL الوصول: | https://doaj.org/article/13b93b7e33cb4db2bed9d73fb09400b5 |
| رقم الانضمام: | edsdoj.13b93b7e33cb4db2bed9d73fb09400b5 |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 23116706 21505551 |
|---|---|
| DOI: | 10.1007/s40820-024-01335-2 |