Academic Journal
Fabrication of C-rich a-SiC Semiconductor Nanoparticles Having Variable Optical Gaps and Particle Sizes Using High-density Plasma in Localized Area
| العنوان: | Fabrication of C-rich a-SiC Semiconductor Nanoparticles Having Variable Optical Gaps and Particle Sizes Using High-density Plasma in Localized Area |
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| المؤلفون: | Kensuke HONDA, Ryutaro KOBAYASHI |
| المصدر: | Electrochemistry, Vol 88, Iss 5, Pp 397-406 (2020) |
| بيانات النشر: | The Electrochemical Society of Japan, 2020. |
| سنة النشر: | 2020 |
| المجموعة: | LCC:Technology LCC:Physical and theoretical chemistry |
| مصطلحات موضوعية: | c-rich a-sic nanoparticles, variable optical gaps and particle sizes, high-density plasma in localized area, photon-to-current conversion functionality, Technology, Physical and theoretical chemistry, QD450-801 |
| الوصف: | Novel method of fabricating nitrogen-doped carbon-rich amorphous silicon-carbon alloy nanoparticles was successfully established using radio-frequency (r. f.) plasma-enhanced vapor deposition (CVD) system with a porous aluminum plate set between a cathode and an anode. Nanoparticles (Nps) were fabricated in high-density plasma regions generated in pores of the porous aluminum plate. Sizes of Nps were dependent on the transit time required for nuclei to pass through high density plasma regions during CVD synthesis. The average diameter of nitrogen-doped (N-doped) carbon-rich amorphous silicon-carbon alloys (C-rich a-SiC) Nps was successfully controlled within the range from 271.2 to 14.8 nm by changing the conditions of CVD synthesis: transit time, r. f. power, chamber pressure, and plate thickness. The optical gaps of C-rich a-SiC Nps were satisfactorily controlled by changing Si/C ratio at amorphous Si-C network in C-rich a-SiC (changing Si/C ratio of the source material used in CVD synthesis). The optical gaps of C-rich a-SiC Nps were controllable from 2.04 to 1.19 eV. The Nps showed photon-to-current conversion functionality in the photoelectrochemical measurement under 360 nm irradiation. In other words, C-rich a-SiC Nps are applicable to devices using photon-to-electron conversion in nano-meter size. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 2186-2451 |
| Relation: | https://www.jstage.jst.go.jp/article/electrochemistry/88/5/88_20-64071/_pdf/-char/en; https://doaj.org/toc/2186-2451 |
| DOI: | 10.5796/electrochemistry.20-64071 |
| URL الوصول: | https://doaj.org/article/0eab790bfa7642cea3d922f3546968ba |
| رقم الانضمام: | edsdoj.0eab790bfa7642cea3d922f3546968ba |
| قاعدة البيانات: | Directory of Open Access Journals |
| تدمد: | 21862451 |
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| DOI: | 10.5796/electrochemistry.20-64071 |