Academic Journal
Enhancing Reliability of Short-Channel Dual Gate InGaZnO Thin Film Transistors by Bottom-Gate Oxide Engineering
| العنوان: | Enhancing Reliability of Short-Channel Dual Gate InGaZnO Thin Film Transistors by Bottom-Gate Oxide Engineering |
|---|---|
| المؤلفون: | Zhou, Kuan-Ju, Chang, Ting-Chang, Yen, Po-Yu, Chen, Yu-An, Chien, Ya-Ting, Huang, Bo-Shen, Lee, Po-Yi, Juan, Tzu-Hsuan, Sze, Simon M., Fan, Yang-Shun, Huang, Chen-Shuo, Tsai, Chih-Hung |
| المساهمون: | Hsinchu Science Park Bureau, Ministry of Science and Technology, Taiwan, Taiwan Semiconductor Research Institute |
| المصدر: | IEEE Electron Device Letters ; volume 45, issue 4, page 593-596 ; ISSN 0741-3106 1558-0563 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE) |
| سنة النشر: | 2024 |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | unknown |
| DOI: | 10.1109/led.2024.3363131 |
| الاتاحة: | https://doi.org/10.1109/led.2024.3363131 http://xplorestaging.ieee.org/ielx7/55/10479122/10431683.pdf?arnumber=10431683 |
| Rights: | https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html ; https://doi.org/10.15223/policy-029 ; https://doi.org/10.15223/policy-037 |
| رقم الانضمام: | edsbas.FFDA9502 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1109/led.2024.3363131 |
|---|