التفاصيل البيبلوغرافية
| العنوان: |
Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD |
| المؤلفون: |
Zheng XH, Feng ZH, Wang YT, Zheng WL, Jia QJ, Jiang XM, Yang H, Liang JW, Zheng XH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China. |
| سنة النشر: |
2002 |
| المجموعة: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| مصطلحات موضوعية: |
Nucleation Layers, X-ray Diffraction, Metalorganic Chemical Vapor Deposition, Gallium Compounds, Nitrides, Light-emitting-diodes, Chemical-vapor-deposition, Ain Buffer Layer, Grown Gan, Sapphire Substrate, Quality, Films, Blue, Temperature, Evolution, 半导体材料, x-ray crystallography, metal organic chemical vapor deposition, light emitting diodes, chemical vapor deposition, atomic layer deposition, vapor-plating, photography--films, finite volume method, x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams |
| الوصف: |
The structural characteristic of cubic GaN (C-GaN) nucleation layers on GaAs(0 0 1) substrates by metalorganic chemical vapor deposition was in detail investigated first by X-ray diffraction (XRD) measurements, using a Huber five-circle diffractometer and an intense synchrotron X-ray source. The XRD results indicate that the C-GaN nucleation layers are highly crystallized. Phi scans and pole figures of the (1 1 1) reflections give a convincing proof that the GaN nucleation layers show exactly cubic symmetrical structure. The GaN(1 1 1) reflections at 54.74degrees in chi are a measurable component, however (002) components parallel to the substrate surface are not detected. Possible explanations are suggested. The pole figures of {1 0 (1) over bar 0} reflections from H-GaN inclusions show that the parasitic H-GaN originates from the C-GaN nucleation layers. The coherence lengths along the close-packed [1 1 1] directions estimated from the (1 1 1) peaks are nanometer order of magnitude. (C) 2002 Elsevier Science B.V. All rights reserved. |
| نوع الوثيقة: |
report |
| اللغة: |
English |
| Relation: |
JOURNAL OF CRYSTAL GROWTH; Zheng XH; Feng ZH; Wang YT; Zheng WL; Jia QJ; Jiang XM; Yang H; Liang JW .Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD ,JOURNAL OF CRYSTAL GROWTH,2002,242 (1-2):124-128; http://ir.semi.ac.cn/handle/172111/11858 |
| الاتاحة: |
http://ir.semi.ac.cn/handle/172111/11858 |
| رقم الانضمام: |
edsbas.FEE36212 |
| قاعدة البيانات: |
BASE |