Academic Journal
Combined Pulsed RF GD-OES and HAXPES for Quantified Depth Profiling through Coatings
| العنوان: | Combined Pulsed RF GD-OES and HAXPES for Quantified Depth Profiling through Coatings |
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| المؤلفون: | Bouttemy, Muriel, Béchu, Solène, Spencer, Ben, Dally, Pia, Chapon, Patrick, Etcheberry, Arnaud |
| المساهمون: | Institut Lavoisier de Versailles (ILV), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS), Sir Henry Royce Institute and the Department of Materials, Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF), HORIBA Scientific France |
| المصدر: | ISSN: 2079-6412 ; Coatings ; https://hal.science/hal-03282206 ; Coatings, 2021, 11 (6), pp.702. ⟨10.3390/coatings11060702⟩. |
| بيانات النشر: | HAL CCSD MDPI |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | pulsed RF GD-OES, XPS, HAXPES, depth profiling, crater chemistry, plasma-induced perturbation, InP, metrology, quantitative analyses, [CHIM]Chemical Sciences |
| الوصف: | International audience ; Chemical characterization at buried interfaces is a real challenge, as the physico-chemical processes operating at the interface govern the properties of many systems and devices. We have developed a methodology based on the combined use of pulsed RF GD-OES (pulsed Radio Frequency Glow Discharge Optical Emission Spectrometry) and XPS (X-ray Photoelectron Spectroscopy) to facilitate the access to deeply buried locations (taking advantage of the high profiling rate of the GD-OES) and perform an accurate chemical diagnosis using XPS directly inside the GD crater. The reliability of the chemical information is, however, influenced by a perturbed layer present at the surface of the crater, hindering traditional XPS examination due to a relatively short sampling depth. Sampling below the perturbed layer may, however, can be achieved using a higher energy excitation source with an increased sampling depth, and is enabled here by a new laboratory-based HAXPES (Hard X-ray PhotoElectron Spectroscopy) (Ga-Kα, 9.25 keV). This new approach combining HAXPES with pulsed RF GD-OES requires benchmarking and is here demonstrated and evaluated on InP. The perturbed depth is estimated and the consistency of the chemical information measured is demonstrated, offering a new route for advanced chemical depth profiling through coatings and heterostructures. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| Relation: | hal-03282206; https://hal.science/hal-03282206; https://hal.science/hal-03282206/document; https://hal.science/hal-03282206/file/coatings-11-00702.pdf |
| DOI: | 10.3390/coatings11060702 |
| الاتاحة: | https://hal.science/hal-03282206 https://hal.science/hal-03282206/document https://hal.science/hal-03282206/file/coatings-11-00702.pdf https://doi.org/10.3390/coatings11060702 |
| Rights: | http://creativecommons.org/licenses/by/ ; info:eu-repo/semantics/OpenAccess |
| رقم الانضمام: | edsbas.FE37E149 |
| قاعدة البيانات: | BASE |
| DOI: | 10.3390/coatings11060702 |
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