Academic Journal
Design and experimental demonstration of high-voltage lateral nMOSFETs and high-temperature CMOS ICs
العنوان: | Design and experimental demonstration of high-voltage lateral nMOSFETs and high-temperature CMOS ICs |
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المؤلفون: | Isukapati, Sundar Babu, Zhang, Hua, Liu, Tianshi, Gupta, Utsav, Ashik, Emran, J Morgan, Adam, Jang, Seung Yup, Lee, Bongmook, Sung, Woongje, Fayed, Ayman, Agarwal, Anant K. |
المساهمون: | Advanced Research Projects Agency - Energy, U.S. Department of Energy |
المصدر: | Materials Science in Semiconductor Processing ; volume 169, page 107921 ; ISSN 1369-8001 |
بيانات النشر: | Elsevier BV |
سنة النشر: | 2024 |
المجموعة: | ScienceDirect (Elsevier - Open Access Articles via Crossref) |
نوع الوثيقة: | article in journal/newspaper |
اللغة: | English |
DOI: | 10.1016/j.mssp.2023.107921 |
الاتاحة: | http://dx.doi.org/10.1016/j.mssp.2023.107921 https://api.elsevier.com/content/article/PII:S1369800123006145?httpAccept=text/xml https://api.elsevier.com/content/article/PII:S1369800123006145?httpAccept=text/plain |
Rights: | https://www.elsevier.com/tdm/userlicense/1.0/ ; http://creativecommons.org/licenses/by/4.0/ |
رقم الانضمام: | edsbas.FDCAF0A9 |
قاعدة البيانات: | BASE |
DOI: | 10.1016/j.mssp.2023.107921 |
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