Academic Journal

Design and experimental demonstration of high-voltage lateral nMOSFETs and high-temperature CMOS ICs

التفاصيل البيبلوغرافية
العنوان: Design and experimental demonstration of high-voltage lateral nMOSFETs and high-temperature CMOS ICs
المؤلفون: Isukapati, Sundar Babu, Zhang, Hua, Liu, Tianshi, Gupta, Utsav, Ashik, Emran, J Morgan, Adam, Jang, Seung Yup, Lee, Bongmook, Sung, Woongje, Fayed, Ayman, Agarwal, Anant K.
المساهمون: Advanced Research Projects Agency - Energy, U.S. Department of Energy
المصدر: Materials Science in Semiconductor Processing ; volume 169, page 107921 ; ISSN 1369-8001
بيانات النشر: Elsevier BV
سنة النشر: 2024
المجموعة: ScienceDirect (Elsevier - Open Access Articles via Crossref)
نوع الوثيقة: article in journal/newspaper
اللغة: English
DOI: 10.1016/j.mssp.2023.107921
الاتاحة: http://dx.doi.org/10.1016/j.mssp.2023.107921
https://api.elsevier.com/content/article/PII:S1369800123006145?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S1369800123006145?httpAccept=text/plain
Rights: https://www.elsevier.com/tdm/userlicense/1.0/ ; http://creativecommons.org/licenses/by/4.0/
رقم الانضمام: edsbas.FDCAF0A9
قاعدة البيانات: BASE
الوصف
DOI:10.1016/j.mssp.2023.107921