Academic Journal

Random telegraph noise in 3d nand flash memories

التفاصيل البيبلوغرافية
العنوان: Random telegraph noise in 3d nand flash memories
المؤلفون: Sottocornola Spinelli A., Malavena G., Lacaita A. L., Monzio Compagnoni C.
المساهمون: Sottocornola Spinelli, A., Malavena, G., Lacaita, A. L., Monzio Compagnoni, C.
سنة النشر: 2021
المجموعة: RE.PUBLIC@POLIMI - Research Publications at Politecnico di Milano
مصطلحات موضوعية: 3D NAND Flash memories, Flash memory reliability, Random telegraph noise
الوصف: In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the polycrystalline nature of the string silicon channels on current transport. Starting from that, experimental data for RTN in 3D arrays are presented and explained via theoretical and simulation models. The attention is drawn, in particular, to the changes in the RTN dependences on the array working conditions that resulted from the transition from planar to 3D architectures. Such changes are explained by considering the impact of highly-defective grain boundaries on percolative current transport in cell channels in combination with the localized nature of the RTN traps.
نوع الوثيقة: article in journal/newspaper
وصف الملف: ELETTRONICO
اللغة: English
Relation: info:eu-repo/semantics/altIdentifier/pmid/34208725; info:eu-repo/semantics/altIdentifier/wos/WOS:000666072000001; volume:12; issue:6; firstpage:703; lastpage:716; numberofpages:14; journal:MICROMACHINES; http://hdl.handle.net/11311/1187104; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85108892995; https://www.mdpi.com/2072-666X/12/6/703
DOI: 10.3390/mi12060703
الاتاحة: http://hdl.handle.net/11311/1187104
https://doi.org/10.3390/mi12060703
https://www.mdpi.com/2072-666X/12/6/703
Rights: info:eu-repo/semantics/openAccess
رقم الانضمام: edsbas.FD9E40E2
قاعدة البيانات: BASE