Academic Journal
2D MXene Electrode-Enabled High-Performance Broadband Photodetector Based on a CVD-Grown 2D Bi 2 Se 3 Ultrathin Film on Silicon
| العنوان: | 2D MXene Electrode-Enabled High-Performance Broadband Photodetector Based on a CVD-Grown 2D Bi 2 Se 3 Ultrathin Film on Silicon |
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| المؤلفون: | Sanju Nandi, Koushik Ghosh, M. Meyyappan, P. K. Giri |
| سنة النشر: | 2023 |
| مصطلحات موضوعية: | Medicine, Physiology, Ecology, Sociology, Space Science, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, silicon topological insulators, observed superior performance, like surface states, excited carriers due, also exhibits self, 9 × 10, 85 × 10, 31 × 10, 16 × 10, superior crystal quality, exceptional optoelectronic capabilities, 2 μs ), highly crystalline bi, grown 2d bi, 12 , 11 , 3 , 2 , interface effectively reduces, infrared range due, enabled photodetector exhibits, dimensional mxene electrodes |
| الوصف: | Topological insulators, such as Bi 2 Se 3 , show great promise in the quest for materials with exceptional optoelectronic capabilities in the visible to mid-infrared range due to their unique Dirac-like surface states with a small bulk band gap and broadband light absorption. Here, we report a low-temperature chemical vapor deposition (CVD) of a highly crystalline Bi 2 Se 3 ultrathin film on a Si substrate, and the Si/Bi 2 Se 3 heterojunction shows a very broadband absorption in the range of 300–2000 nm. A Si/Bi 2 Se 3 heterostructure photodetector with two-dimensional MXene electrodes was constructed for the first time. The MXene electrode-enabled photodetector exhibits a truly broadband light detection in the range of 300–1550 nm and a very fast response of a few microseconds (rise time of 19.7 μs and fall time of 35.2 μs). The device demonstrates a high responsivity of 6.96 A/W, a high detectivity of 6.31 × 10 12 Jones, a large linear dynamic range of 92.93 dB, and an excellent on/off ratio of 1.9 × 10 4 at 808 nm. It also exhibits self-biased (0 V) photodetection with a reasonably high responsivity of 24.7 mA/W and excellent detectivity of 4.16 × 10 11 Jones under illumination. The highest responsivity and detectivity of the device are found to be 7.56 A/W and 6.85 × 10 12 Jones, respectively, at 980 nm. The exceptional crystallinity of the Bi 2 Se 3 film characterized by superior crystal quality and low defect density at the Si/Bi 2 Se 3 interface, along with the presence of a strong built-in electric field, contributes to the observed superior performance of the heterojunction photodetectors. Additionally, the synthesis and functionalization of Ti 3 C 2 T x MXene allow for the preparation of high-quality electrodes by a simple spin-casting process at a low cost. The van der Waals MXene–Bi 2 Se 3 interface effectively reduces the dark current and enhances the collection of photon-excited carriers due to the low density of chemical disorders and negligible defects. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | unknown |
| Relation: | https://figshare.com/articles/journal_contribution/2D_MXene_Electrode-Enabled_High-Performance_Broadband_Photodetector_Based_on_a_CVD-Grown_2D_Bi_sub_2_sub_Se_sub_3_sub_Ultrathin_Film_on_Silicon/24747716 |
| DOI: | 10.1021/acsaelm.3c01363.s001 |
| الاتاحة: | https://doi.org/10.1021/acsaelm.3c01363.s001 https://figshare.com/articles/journal_contribution/2D_MXene_Electrode-Enabled_High-Performance_Broadband_Photodetector_Based_on_a_CVD-Grown_2D_Bi_sub_2_sub_Se_sub_3_sub_Ultrathin_Film_on_Silicon/24747716 |
| Rights: | CC BY-NC 4.0 |
| رقم الانضمام: | edsbas.FCEFA9C4 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1021/acsaelm.3c01363.s001 |
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