التفاصيل البيبلوغرافية
| العنوان: |
Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties |
| المؤلفون: |
Liang S, Zhu HL, Pan JQ, Ye XL, Wang W, Liang, S, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China. E-mail: liangsong@red.semi.ac.cn |
| سنة النشر: |
2006 |
| المجموعة: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| مصطلحات موضوعية: |
Bimodal Size Distribution, Metalorganic Vapor Phase Epitaxy, Self-assembled Quantum Dots, Indium Arsenide, Phase-epitaxy, Islands, Ingaas, Size, Laser, 光电子学, metal organic chemical vapor deposition, dimensions, lasers, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition), omvpe (vapor deposition), organo-metal vapor phase epitaxy, organometallic chemical vapor deposition, organometallic vapor phase epitaxy, metalorganic chemical vapor deposition, organometallic vapor deposition, isles, islets, atolls, cays, island arcs, keys (islands) |
| الوصف: |
The growth of InAs quantum dots on vicinal GaAs (100) Substrates was systematically studied using low-pressure metalorganic chemical vapor deposition (MOCVD). The dots showed a clear bimodal size distribution on vicinal substrates. The way of evolution of this bimodal size distribution was studied as a function of growth temperature, InAs layer thickness and InAs deposition rate. The optical properties of dots grown on vicinal substrates were also studied by photoluminescence (PL). It was found that, compared with dots on exact substrates, dots on vicinal substrates had better optical properties such as a narrower PL line width, a longer emission wavelength, and a larger PL intensity. (c) 2006 Elsevier B.V. All rights reserved. |
| نوع الوثيقة: |
report |
| اللغة: |
English |
| Relation: |
JOURNAL OF CRYSTAL GROWTH; Liang S; Zhu HL; Pan JQ; Ye XL; Wang W .Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties ,JOURNAL OF CRYSTAL GROWTH,2006,289(2):477-484; http://ir.semi.ac.cn/handle/172111/10736 |
| الاتاحة: |
http://ir.semi.ac.cn/handle/172111/10736 |
| رقم الانضمام: |
edsbas.FCE1C8CB |
| قاعدة البيانات: |
BASE |