Academic Journal
Direct evidence of causality between chemical purity and band-edge potential fluctuations in nanoparticle ink-based Cu 2 ZnSn(S,Se) 4 solar cells
| العنوان: | Direct evidence of causality between chemical purity and band-edge potential fluctuations in nanoparticle ink-based Cu 2 ZnSn(S,Se) 4 solar cells |
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| المؤلفون: | Campbell, S, Qu, Y, Major, J, Lagarde, David, Labbe, C., Maiello, P, Barrioz, V, Beattie, N, Zoppi, G |
| المساهمون: | Department of Mathematics, Physics and Electrical Engineering Newcastle, Northumbria University Newcastle, Stephenson Institute for Renewable Energy, University of Liverpool, Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-Institut Rayonnement Matière de Saclay (DRF) (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Nanomatériaux, Ions et Métamatériaux pour la Photonique (NIMPH), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN) |
| المصدر: | ISSN: 0022-3727 ; EISSN: 1361-6463. |
| بيانات النشر: | HAL CCSD IOP Publishing |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [CHIM.MATE]Chemical Sciences/Material chemistry, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph] |
| الوصف: | International audience ; Kesterite solar cells based on chalcogenide Cu2ZnSn(S,Se)4 (CZTSSe) are a viable approach to thin film photovoltaics, utilising Earth-abundant, non-toxic elements. CZTSSe films produced from nanoparticle inks offer a cost-effective solution-based method of fabrication. However, improving efficiency in these devices has proved challenging, in part due to the presence of detrimental complex defects within the bulk of the CZTSSe absorber. In this study, the behaviour of nanoparticle-based CZTSSe absorbers and solar cells made from relatively low and high quality grade chemicals is investigated with a view to improving cost-effectiveness of the ink-based fabrication process. Photoluminescence spectroscopy revealed the presence of similar shallow acceptor plus shallow donor states in both low and high purity precursor absorbers. We demonstrate a relationship between the average depth of energy band-edge potential fluctuations and absorber quality where the higher grade chemical precursor-based absorber outperforms the lower purity version. In addition, the low purity precursor absorber had a higher total defect density resulting in a 10 meV increase in the average electrostatic potential fluctuations. Deep level transient spectroscopy in solar devices indicated the presence of detrimental deep defect states in both types of absorber. Notwithstanding the high purity precursor absorber with lower defect density, the power conversion efficiencies of both types of CZTSSe solar cells were similar (~5%), implying an issue other than defects in the absorber bulk inhibits device performance as evidenced by quantum efficiency analysis and current–voltage measurements. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1088/1361-6463/aafe60 |
| الاتاحة: | https://hal.science/hal-02438902 https://doi.org/10.1088/1361-6463/aafe60 |
| رقم الانضمام: | edsbas.FC6612DC |
| قاعدة البيانات: | BASE |
| DOI: | 10.1088/1361-6463/aafe60 |
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