Academic Journal

Observation of Crystallization, Precipitation, and Phase Transformation Phenomena in Si Rich Titanium Silicide Thin Films

التفاصيل البيبلوغرافية
العنوان: Observation of Crystallization, Precipitation, and Phase Transformation Phenomena in Si Rich Titanium Silicide Thin Films
المؤلفون: Domenicucci, A., Gifford, G., Clevenger, L.A.
المصدر: MRS Proceedings ; volume 398 ; ISSN 0272-9172 1946-4274
بيانات النشر: Springer Science and Business Media LLC
سنة النشر: 1995
الوصف: Crystallization, precipitation, and phase transformation phenomena were observed in titanium suicide thin film samples during in situ heating experiments in a transmission electron microscope. The as-deposited Ti x Si y films were 110 nm in thickness with a composition of 1 Ti to 2.33 Si. Crystallization of the C49 phase was followed isothermally near the sputter deposition temperature. The movement of individual grain boundaries was recorded so that a “velocity of crystallization” could be calculated. The precipitation of excess silicon from the C49 phase was first observed in the 650°C to 750°C temperature range. The precipitates were predominantly of the incoherent type, with a smaller number existing at the grain boundaries. Ostwald ripening then occurred up to the C49 to C54 phase transformation which was accompanied by a dramatic increase in grain size. Grain boundary movement during the phase transformation was such that large precipitates, which were originally at C49-C49 boundaries, ended up within resulting C54 crystals. Many of these larger precipitates were found to exist as epitaxial “islands” at the TiSi 2 /Si substrate interface.
نوع الوثيقة: article in journal/newspaper
اللغة: English
DOI: 10.1557/proc-398-463
الاتاحة: http://dx.doi.org/10.1557/proc-398-463
https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400413072
Rights: https://www.cambridge.org/core/terms
رقم الانضمام: edsbas.FC3EDF2E
قاعدة البيانات: BASE