Academic Journal
Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression
| العنوان: | Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression |
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| المؤلفون: | Titus, J.L., Wheatley, C.F., Burton, D.I., Mouret, I., Allenspach, M., Brews, J., Schrimpf, R., Galloway, K., Pease, R.L. |
| المصدر: | IEEE Transactions on Nuclear Science ; volume 42, issue 6, page 1928-1934 ; ISSN 0018-9499 1558-1578 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE) |
| سنة النشر: | 1995 |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | unknown |
| DOI: | 10.1109/23.489236 |
| الاتاحة: | http://dx.doi.org/10.1109/23.489236 http://xplorestaging.ieee.org/ielx1/23/10517/00489236.pdf?arnumber=489236 |
| Rights: | https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html |
| رقم الانضمام: | edsbas.FC357667 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1109/23.489236 |
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