Academic Journal

Parasitic Effect Compensation Method for IGBT ON-State Voltage Measurement in Traction Inverter Application

التفاصيل البيبلوغرافية
العنوان: Parasitic Effect Compensation Method for IGBT ON-State Voltage Measurement in Traction Inverter Application
المؤلفون: Peng, Yingzhou, Chu, Kaiqi, Mu, Shuji, Cao, Hu, Wang, Huai
المصدر: Peng , Y , Chu , K , Mu , S , Cao , H & Wang , H 2022 , ' Parasitic Effect Compensation Method for IGBT ON-State Voltage Measurement in Traction Inverter Application ' , I E E E Transactions on Power Electronics , vol. 37 , no. 5 , pp. 4937-4941 . https://doi.org/10.1109/TPEL.2021.3130209
سنة النشر: 2022
المجموعة: Aalborg University (AAU): Publications / Aalborg Universitet: Publikationer
مصطلحات موضوعية: Current measurement, Index terms-Power semiconductor, Insulated gate bipolar transistors, Inverters, Semiconductor device measurement, Switches, Temperature measurement, Voltage measurement, compensation, on-state voltage, parasitic inductance
الوصف: This letter proposes a novel compensation method to eliminate the impact of parasitic inductances on the measurement accuracy of on-state voltage of power semiconductor devices in operating converters. It is an online and noninvasive method by measuring the output current of inverter and on-state voltage of power device only. The impact of parasitic inductances and its compensation are verified experimentally through a traction inverter system.
نوع الوثيقة: article in journal/newspaper
وصف الملف: application/pdf
اللغة: English
DOI: 10.1109/TPEL.2021.3130209
الاتاحة: https://vbn.aau.dk/da/publications/5de9a9e7-03eb-4396-b13e-ab80546d3e24
https://doi.org/10.1109/TPEL.2021.3130209
https://vbn.aau.dk/ws/files/454314898/FINAL_VERSION.pdf
http://www.scopus.com/inward/record.url?scp=85120081376&partnerID=8YFLogxK
Rights: info:eu-repo/semantics/openAccess
رقم الانضمام: edsbas.F96FC16A
قاعدة البيانات: BASE
الوصف
DOI:10.1109/TPEL.2021.3130209