Academic Journal
Parasitic Effect Compensation Method for IGBT ON-State Voltage Measurement in Traction Inverter Application
العنوان: | Parasitic Effect Compensation Method for IGBT ON-State Voltage Measurement in Traction Inverter Application |
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المؤلفون: | Peng, Yingzhou, Chu, Kaiqi, Mu, Shuji, Cao, Hu, Wang, Huai |
المصدر: | Peng , Y , Chu , K , Mu , S , Cao , H & Wang , H 2022 , ' Parasitic Effect Compensation Method for IGBT ON-State Voltage Measurement in Traction Inverter Application ' , I E E E Transactions on Power Electronics , vol. 37 , no. 5 , pp. 4937-4941 . https://doi.org/10.1109/TPEL.2021.3130209 |
سنة النشر: | 2022 |
المجموعة: | Aalborg University (AAU): Publications / Aalborg Universitet: Publikationer |
مصطلحات موضوعية: | Current measurement, Index terms-Power semiconductor, Insulated gate bipolar transistors, Inverters, Semiconductor device measurement, Switches, Temperature measurement, Voltage measurement, compensation, on-state voltage, parasitic inductance |
الوصف: | This letter proposes a novel compensation method to eliminate the impact of parasitic inductances on the measurement accuracy of on-state voltage of power semiconductor devices in operating converters. It is an online and noninvasive method by measuring the output current of inverter and on-state voltage of power device only. The impact of parasitic inductances and its compensation are verified experimentally through a traction inverter system. |
نوع الوثيقة: | article in journal/newspaper |
وصف الملف: | application/pdf |
اللغة: | English |
DOI: | 10.1109/TPEL.2021.3130209 |
الاتاحة: | https://vbn.aau.dk/da/publications/5de9a9e7-03eb-4396-b13e-ab80546d3e24 https://doi.org/10.1109/TPEL.2021.3130209 https://vbn.aau.dk/ws/files/454314898/FINAL_VERSION.pdf http://www.scopus.com/inward/record.url?scp=85120081376&partnerID=8YFLogxK |
Rights: | info:eu-repo/semantics/openAccess |
رقم الانضمام: | edsbas.F96FC16A |
قاعدة البيانات: | BASE |
DOI: | 10.1109/TPEL.2021.3130209 |
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