التفاصيل البيبلوغرافية
| العنوان: |
Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth |
| المؤلفون: |
Zhao C (Zhao C.), Chen YH (Chen Y. H.), Zhao M (Zhao Man), Zhang CL (Zhang C. L.), Xu B (Xu B.), Yu LK (Yu L. K.), Sun J (Sun J.), Lei W (Lei W.), Wang ZG (Wang Z. G.), Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: czhao@semi.ac.cn |
| سنة النشر: |
2006 |
| المجموعة: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| مصطلحات موضوعية: |
Monte Carlo Simulation, Molecular Beam Epitaxy, Kinetic Effects, Quantum Dot, Layer, 半导体材料, monte carlo method, atomic layer deposition, 蒙特卡罗法, model sampling, artificial sampling, monte carlo simulation method, stochastic sampling, 蒙特卡罗方法, mc, mclean-chandler basis set, monte-carlo method, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd |
| الوصف: |
Performing an event-based continuous kinetic Monte Carlo simulation, we investigate the modulated effect induced by the dislocation on the substrate to the growth of semiconductor quantum dots (QDs). The relative positions between the QDs and the dislocations are studied. The stress effects to the growth of the QDs are considered in simulation. The simulation results are compared with the experiment and the agreement between them indicates that this simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor QDs. (c) 2006 Elsevier Ltd. All rights reserved. |
| نوع الوثيقة: |
report |
| اللغة: |
English |
| Relation: |
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING; Zhao C (Zhao C.); Chen YH (Chen Y. H.); Zhao M (Zhao Man); Zhang CL (Zhang C. L.); Xu B (Xu B.); Yu LK (Yu L. K.); Sun J (Sun J.); Lei W (Lei W.); Wang ZG (Wang Z. G.) .Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth ,MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2006,9(1-3):31-35; http://ir.semi.ac.cn/handle/172111/10532 |
| الاتاحة: |
http://ir.semi.ac.cn/handle/172111/10532 |
| رقم الانضمام: |
edsbas.F808D8BC |
| قاعدة البيانات: |
BASE |