Academic Journal
Investigation of the device degradation mechanism in pentacene-based thin-film transistors using low-frequency-noise spectroscopy
| العنوان: | Investigation of the device degradation mechanism in pentacene-based thin-film transistors using low-frequency-noise spectroscopy |
|---|---|
| المؤلفون: | Ke, L., Dolmanan, S.B., Vijila, C., Chua, S.J., Han, Y.H., Mei, T. |
| المساهمون: | ELECTRICAL & COMPUTER ENGINEERING |
| المصدر: | Scopus |
| سنة النشر: | 2010 |
| المجموعة: | National University of Singapore: ScholarBank@NUS |
| مصطلحات موضوعية: | Degradation, Low frequency noise, Pentacene, Thin film transistor |
| الوصف: | 10.1109/TED.2009.2036313 ; IEEE Transactions on Electron Devices ; 57 ; 2 ; 385-390 ; IETDA |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | unknown |
| تدمد: | 00189383 |
| Relation: | Ke, L., Dolmanan, S.B., Vijila, C., Chua, S.J., Han, Y.H., Mei, T. (2010-02). Investigation of the device degradation mechanism in pentacene-based thin-film transistors using low-frequency-noise spectroscopy. IEEE Transactions on Electron Devices 57 (2) : 385-390. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2036313; http://scholarbank.nus.edu.sg/handle/10635/56404; 000273764800005 |
| الاتاحة: | http://scholarbank.nus.edu.sg/handle/10635/56404 |
| رقم الانضمام: | edsbas.F728ADAC |
| قاعدة البيانات: | BASE |
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