التفاصيل البيبلوغرافية
العنوان: |
Investigation of the device degradation mechanism in pentacene-based thin-film transistors using low-frequency-noise spectroscopy |
المؤلفون: |
Ke, L., Dolmanan, S.B., Vijila, C., Chua, S.J., Han, Y.H., Mei, T. |
المساهمون: |
ELECTRICAL & COMPUTER ENGINEERING |
المصدر: |
Scopus |
سنة النشر: |
2010 |
المجموعة: |
National University of Singapore: ScholarBank@NUS |
مصطلحات موضوعية: |
Degradation, Low frequency noise, Pentacene, Thin film transistor |
الوصف: |
10.1109/TED.2009.2036313 ; IEEE Transactions on Electron Devices ; 57 ; 2 ; 385-390 ; IETDA |
نوع الوثيقة: |
article in journal/newspaper |
اللغة: |
unknown |
تدمد: |
00189383 |
Relation: |
Ke, L., Dolmanan, S.B., Vijila, C., Chua, S.J., Han, Y.H., Mei, T. (2010-02). Investigation of the device degradation mechanism in pentacene-based thin-film transistors using low-frequency-noise spectroscopy. IEEE Transactions on Electron Devices 57 (2) : 385-390. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2036313; http://scholarbank.nus.edu.sg/handle/10635/56404; 000273764800005 |
الاتاحة: |
http://scholarbank.nus.edu.sg/handle/10635/56404 |
رقم الانضمام: |
edsbas.F728ADAC |
قاعدة البيانات: |
BASE |