Academic Journal

Investigation of the device degradation mechanism in pentacene-based thin-film transistors using low-frequency-noise spectroscopy

التفاصيل البيبلوغرافية
العنوان: Investigation of the device degradation mechanism in pentacene-based thin-film transistors using low-frequency-noise spectroscopy
المؤلفون: Ke, L., Dolmanan, S.B., Vijila, C., Chua, S.J., Han, Y.H., Mei, T.
المساهمون: ELECTRICAL & COMPUTER ENGINEERING
المصدر: Scopus
سنة النشر: 2010
المجموعة: National University of Singapore: ScholarBank@NUS
مصطلحات موضوعية: Degradation, Low frequency noise, Pentacene, Thin film transistor
الوصف: 10.1109/TED.2009.2036313 ; IEEE Transactions on Electron Devices ; 57 ; 2 ; 385-390 ; IETDA
نوع الوثيقة: article in journal/newspaper
اللغة: unknown
تدمد: 00189383
Relation: Ke, L., Dolmanan, S.B., Vijila, C., Chua, S.J., Han, Y.H., Mei, T. (2010-02). Investigation of the device degradation mechanism in pentacene-based thin-film transistors using low-frequency-noise spectroscopy. IEEE Transactions on Electron Devices 57 (2) : 385-390. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2036313; http://scholarbank.nus.edu.sg/handle/10635/56404; 000273764800005
الاتاحة: http://scholarbank.nus.edu.sg/handle/10635/56404
رقم الانضمام: edsbas.F728ADAC
قاعدة البيانات: BASE