Academic Journal

Studies on In x (As 2 Se 3 ) 1-x thin films using variable angle spectroscopic ellipsometry (VASE)

التفاصيل البيبلوغرافية
العنوان: Studies on In x (As 2 Se 3 ) 1-x thin films using variable angle spectroscopic ellipsometry (VASE)
المؤلفون: Amin, G. A. M.
المصدر: Materials Science-Poland ; volume 33, issue 3, page 501-507 ; ISSN 2083-134X
بيانات النشر: Walter de Gruyter GmbH
سنة النشر: 2015
الوصف: The results of multi-angle ellipsometrical measurements of thermally evaporated In x (As 2 Se 3 ) 1-x (x = 0, 0.01,0.05) films are presented. Optical parameters n and E s of thin In x (As 2 Se 3 ) 1-x films show that indium atoms were incorporated into the host matrix of As 2 Se 3 forming distinct features depending on the indium concentration. Refractive index, n, was found to decrease with the addition of In to the binary As 2 Se 3 . The real and imaginary parts of the dielectric function, ε' and ε" were also calculated from the obtained data and correlated with In concentration. It was found that e' decreases with the increase of In content while ε" increases with the increase of In content. Absorption edge is shifted towards lower photon energy with the increase of In content. As a result, the optical energy gap decreases with increasing In content. This has been correlated with the chemical character of the additive as well as with the structural and bonding aspects of the amorphous composition. Nonlinear optical constants (χ (3) and n 2 ) were determined from linear optical parameters using semi-empirical relations in the long wavelength limit.
نوع الوثيقة: article in journal/newspaper
اللغة: English
DOI: 10.1515/msp-2015-0075
الاتاحة: http://dx.doi.org/10.1515/msp-2015-0075
https://content.sciendo.com/view/journals/msp/33/3/article-p501.xml
https://www.sciendo.com/article/10.1515/msp-2015-0075
Rights: http://creativecommons.org/licenses/by-nc-nd/3.0
رقم الانضمام: edsbas.F66901C4
قاعدة البيانات: BASE