Academic Journal

High-Responsivity Photodetection by a Self-Catalyzed Phase-Pure p-GaAs Nanowire

التفاصيل البيبلوغرافية
العنوان: High-Responsivity Photodetection by a Self-Catalyzed Phase-Pure p-GaAs Nanowire
المؤلفون: Ali, H, Zhang, Y, Tang, J, Peng, K, Sun, S, Sun, Y, Song, F, Falak, A, Wu, S, Qian, C, Wang, M, Zuo, Z, Jin, K-J, Sanchez, AM, Liu, H, Xu, X
المصدر: Small , 14 (17) (2018)
بيانات النشر: WILEY-V C H VERLAG GMBH
سنة النشر: 2018
المجموعة: University College London: UCL Discovery
مصطلحات موضوعية: GaAs nanowires, self-catalyzed growth, phase-pure crystal structure, photodetector, photo-responsivity.
الوصف: Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier‐transportation barriers, and foreign impurities (Au) with deep‐energy levels can form carrier traps and nonradiative recombination centers. Here, self‐catalyzed p‐type GaAs nanowires (NWs) with a pure zinc blende (ZB) structure are first developed, and then a photodetector made from these NWs is fabricated. Due to the absence of stacking faults and suppression of large amount of defects with deep energy levels, the photodetector exhibits room‐temperature high photoresponsivity of 1.45 × 105 A W−1 and excellent specific detectivity (D*) up to 1.48 × 1014 Jones for a low‐intensity light signal of wavelength 632.8 nm, which outperforms previously reported NW‐based photodetectors. These results demonstrate these self‐catalyzed pure‐ZB GaAs NWs to be promising candidates for optoelectronics applications.
نوع الوثيقة: article in journal/newspaper
وصف الملف: text
اللغة: English
Relation: https://discovery.ucl.ac.uk/id/eprint/10048707/3/Liu_Small-v1.pdf; https://discovery.ucl.ac.uk/id/eprint/10048707/
الاتاحة: https://discovery.ucl.ac.uk/id/eprint/10048707/3/Liu_Small-v1.pdf
https://discovery.ucl.ac.uk/id/eprint/10048707/
Rights: open
رقم الانضمام: edsbas.F5C2BAA2
قاعدة البيانات: BASE