Academic Journal
High-Responsivity Photodetection by a Self-Catalyzed Phase-Pure p-GaAs Nanowire
العنوان: | High-Responsivity Photodetection by a Self-Catalyzed Phase-Pure p-GaAs Nanowire |
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المؤلفون: | Ali, H, Zhang, Y, Tang, J, Peng, K, Sun, S, Sun, Y, Song, F, Falak, A, Wu, S, Qian, C, Wang, M, Zuo, Z, Jin, K-J, Sanchez, AM, Liu, H, Xu, X |
المصدر: | Small , 14 (17) (2018) |
بيانات النشر: | WILEY-V C H VERLAG GMBH |
سنة النشر: | 2018 |
المجموعة: | University College London: UCL Discovery |
مصطلحات موضوعية: | GaAs nanowires, self-catalyzed growth, phase-pure crystal structure, photodetector, photo-responsivity. |
الوصف: | Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier‐transportation barriers, and foreign impurities (Au) with deep‐energy levels can form carrier traps and nonradiative recombination centers. Here, self‐catalyzed p‐type GaAs nanowires (NWs) with a pure zinc blende (ZB) structure are first developed, and then a photodetector made from these NWs is fabricated. Due to the absence of stacking faults and suppression of large amount of defects with deep energy levels, the photodetector exhibits room‐temperature high photoresponsivity of 1.45 × 105 A W−1 and excellent specific detectivity (D*) up to 1.48 × 1014 Jones for a low‐intensity light signal of wavelength 632.8 nm, which outperforms previously reported NW‐based photodetectors. These results demonstrate these self‐catalyzed pure‐ZB GaAs NWs to be promising candidates for optoelectronics applications. |
نوع الوثيقة: | article in journal/newspaper |
وصف الملف: | text |
اللغة: | English |
Relation: | https://discovery.ucl.ac.uk/id/eprint/10048707/3/Liu_Small-v1.pdf; https://discovery.ucl.ac.uk/id/eprint/10048707/ |
الاتاحة: | https://discovery.ucl.ac.uk/id/eprint/10048707/3/Liu_Small-v1.pdf https://discovery.ucl.ac.uk/id/eprint/10048707/ |
Rights: | open |
رقم الانضمام: | edsbas.F5C2BAA2 |
قاعدة البيانات: | BASE |
الوصف غير متاح. |