التفاصيل البيبلوغرافية
| العنوان: |
Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials |
| المؤلفون: |
Zou LF, Acosta-Ortiz SE, Zou LX, Regalado LE, Sun DZ, Wang ZG, Zou LF,Ctr Invest Opt AC,Unidad Aguascalientes,Juan Montoro 207,Zona Ctr,Aguascalientes 20000,Ags,Mexico. 电子邮箱地址: lfzou@ags.ciateq.mx |
| سنة النشر: |
1998 |
| المجموعة: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| مصطلحات موضوعية: |
Gas Source Molecular Beam Epitaxy, Thermal Stability, Heterostructures, Si1-xgex, Strain Relaxation, 半导体物理, stabilite thermique, thermische stabilitaet, thermostability |
| الوصف: |
Gas source molecular beam epitaxy has been used to grow Si1-xGex alloys and Si1-xGex/Si multi-quantum wells (MQWs) on (100) Si substrates with Si2H6 and GeH4 as sources. Heterostructures and MQWs with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. The structural stability and strain relaxation in Si1-xGex/Si heterostructures have been investigated, and compared to that in the As ion-implanted Si1-xGex epilayers. The results show that the strain relaxation mechanism of the non-implanted Si1-xGex epilayers is different from that of the As ion-implanted Si1-xGex epilayers. |
| نوع الوثيقة: |
report |
| اللغة: |
English |
| Relation: |
REVISTA MEXICANA DE FISICA; Zou LF; Acosta-Ortiz SE; Zou LX; Regalado LE; Sun DZ; Wang ZG .Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials ,REVISTA MEXICANA DE FISICA ,1998,44(0):93-96; http://ir.semi.ac.cn/handle/172111/13026 |
| الاتاحة: |
http://ir.semi.ac.cn/handle/172111/13026 |
| رقم الانضمام: |
edsbas.F20040E1 |
| قاعدة البيانات: |
BASE |