Academic Journal

Oxygen-Driven Metal–Insulator Transition in SrNbO 3 Thin Films Probed by Infrared Spectroscopy

التفاصيل البيبلوغرافية
العنوان: Oxygen-Driven Metal–Insulator Transition in SrNbO 3 Thin Films Probed by Infrared Spectroscopy
المؤلفون: Paola Di Pietro, Chiara Bigi, Sandeep Kumar Chaluvadi, Daniel Knez, Piu Rajak, Regina Ciancio, Jun Fujii, Francesco Mercuri, Stefano Lupi, Giorgio Rossi, Francesco Borgatti, Andrea Perucchi, Pasquale Orgiani
المساهمون: P. Di Pietro, C. Bigi, S. Kumar Chaluvadi, D. Knez, P. Rajak, R. Ciancio, J. Fujii, F. Mercuri, S. Lupi, G. Rossi, F. Borgatti, A. Perucchi, P. Orgiani
بيانات النشر: Wiley Blackwell Publishing
سنة النشر: 2022
المجموعة: The University of Milan: Archivio Istituzionale della Ricerca (AIR)
مصطلحات موضوعية: high-resolution transmission electron microscopy, infrared spectroscopy, perovskite oxide, thin-film, X-ray powder diffraction, Settore FIS/03 - Fisica della Materia, Settore FIS/01 - Fisica Sperimentale
الوصف: The occurrence of oxygen-driven metal–insulator-transition (MIT) in SrNbO3 (SNO) thin films epitaxially grown on (110)-oriented DyScO3 has been reported. SNO films are fabricated by the pulsed laser deposition technique at different partial O2 pressure to vary the oxygen content and their structural, optical, and transport properties are probed. SNO unit cell has been found to shrink vertically as the oxygen content increases but keeping the epitaxial matching with the substrate. The results of Fourier-transform infra-red spectroscopy show that highly oxygenated SNO samples (i.e., grown at high oxygen pressure) show distinct optical conductivity behavior with respect to oxygen deficient films, hence demonstrating the insulating character of the formers with respect to those fabricated with lower pressure conditions. Tailoring the optical absorption and conductivity of strontium niobate epitaxial films across the MIT will favor novel applications of this material.
نوع الوثيقة: article in journal/newspaper
اللغة: English
Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000767659600001; volume:8; issue:7; firstpage:1; lastpage:9; numberofpages:9; journal:ADVANCED ELECTRONIC MATERIALS; http://hdl.handle.net/2434/915988; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85126015777
DOI: 10.1002/aelm.202101338
الاتاحة: http://hdl.handle.net/2434/915988
https://doi.org/10.1002/aelm.202101338
Rights: info:eu-repo/semantics/openAccess
رقم الانضمام: edsbas.F1D01483
قاعدة البيانات: BASE