Academic Journal

Optical and Electrical Properties of p-GaAe Doped with Sb

التفاصيل البيبلوغرافية
العنوان: Optical and Electrical Properties of p-GaAe Doped with Sb
المؤلفون: Shigetomi, Shigeru, Ikari, Tetsuo, Nishimura, Hideki
المصدر: Japanese Journal of Applied Physics ; volume 32, issue 9R, page 4042B ; ISSN 0021-4922 1347-4065
بيانات النشر: IOP Publishing
سنة النشر: 1993
الوصف: The sample name in title was mistakenly printed. “GaAe” should read “GaSe”.
نوع الوثيقة: article in journal/newspaper
اللغة: unknown
DOI: 10.1143/jjap.32.4042b
DOI: 10.1143/JJAP.32.4042B
DOI: 10.1143/JJAP.32.4042B/pdf
الاتاحة: http://dx.doi.org/10.1143/jjap.32.4042b
https://iopscience.iop.org/article/10.1143/JJAP.32.4042B
https://iopscience.iop.org/article/10.1143/JJAP.32.4042B/pdf
Rights: https://iopscience.iop.org/page/copyright ; https://iopscience.iop.org/info/page/text-and-data-mining
رقم الانضمام: edsbas.F1AC3BBB
قاعدة البيانات: BASE