Academic Journal
Optical and Electrical Properties of p-GaAe Doped with Sb
العنوان: | Optical and Electrical Properties of p-GaAe Doped with Sb |
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المؤلفون: | Shigetomi, Shigeru, Ikari, Tetsuo, Nishimura, Hideki |
المصدر: | Japanese Journal of Applied Physics ; volume 32, issue 9R, page 4042B ; ISSN 0021-4922 1347-4065 |
بيانات النشر: | IOP Publishing |
سنة النشر: | 1993 |
الوصف: | The sample name in title was mistakenly printed. “GaAe” should read “GaSe”. |
نوع الوثيقة: | article in journal/newspaper |
اللغة: | unknown |
DOI: | 10.1143/jjap.32.4042b |
DOI: | 10.1143/JJAP.32.4042B |
DOI: | 10.1143/JJAP.32.4042B/pdf |
الاتاحة: | http://dx.doi.org/10.1143/jjap.32.4042b https://iopscience.iop.org/article/10.1143/JJAP.32.4042B https://iopscience.iop.org/article/10.1143/JJAP.32.4042B/pdf |
Rights: | https://iopscience.iop.org/page/copyright ; https://iopscience.iop.org/info/page/text-and-data-mining |
رقم الانضمام: | edsbas.F1AC3BBB |
قاعدة البيانات: | BASE |
DOI: | 10.1143/jjap.32.4042b |
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