Academic Journal
Effect of source–drain contact and channel length on the performance of vertical thin-film transistors
| العنوان: | Effect of source–drain contact and channel length on the performance of vertical thin-film transistors |
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| المؤلفون: | Yin, Xue-Mei, Lin, De-Lang, Yan, Yu-Pei, Li, Yi, Ma, Wei-Min |
| المساهمون: | The Characteristic Innovation Project of Guangdong Universities, University-Level Quality Engineering Project |
| المصدر: | AIP Advances ; volume 13, issue 10 ; ISSN 2158-3226 |
| بيانات النشر: | AIP Publishing |
| سنة النشر: | 2023 |
| الوصف: | Vertical thin-film transistors (V-TFTs) with an InSnO-stabilized ZnO channel were fabricated. The vertical architecture enables devices with submicron channel lengths (≤500 nm) to afford delivering drain current greatly exceeding that of conventional planar TFTs. Due to the submicron length of the V-TFT channel, an on/off state current higher than 107 can be achieved even with a drain voltage of 0.01 V, and the subthreshold swing was kept in the tens of mV/dec range owing to the efficacious device preparation. In order to understand the influence of structures on the device performance, the source–drain (S/D) contact and the channel length of V-TFTs were designed and studied. The results show that the increase in the contact area between the active layer and the S/D region can reduce the S/D contact resistance, thus affecting the drain current across the threshold region. When the channel length is shortened to a deep submicron size, the electrostatic coupling between the source and drain electrodes will lead to a decrease in the S/D barrier. This leads to the leakage-induced barrier reduction effect of V-TFTs. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1063/5.0174858 |
| DOI: | 10.1063/5.0174858/18169240/105217_1_5.0174858.pdf |
| الاتاحة: | http://dx.doi.org/10.1063/5.0174858 https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/5.0174858/18169240/105217_1_5.0174858.pdf |
| رقم الانضمام: | edsbas.EDEF095D |
| قاعدة البيانات: | BASE |
| DOI: | 10.1063/5.0174858 |
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