Academic Journal

A 17.8–20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers

التفاصيل البيبلوغرافية
العنوان: A 17.8–20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers
المؤلفون: Javier del Pino, Sunil L. Khemchandani, Mario San-Miguel-Montesdeoca, Sergio Mateos-Angulo, Daniel Mayor-Duarte, Jose Luis Saiz-Perez, David Galante-Sempere
المصدر: Micromachines; Volume 14; Issue 6; Pages: 1184
بيانات النشر: Multidisciplinary Digital Publishing Institute
سنة النشر: 2023
المجموعة: MDPI Open Access Publishing
مصطلحات موضوعية: phased array, SiGe, vector modulator (VM), vector-sum phase shifter (VSPS)
الوصف: This paper presents a novel and compact vector modulator (VM) architecture implemented in 130 nm SiGe BiCMOS technology. The design is suitable for use in receive phased arrays for the gateways of major low Earth orbit (LEO) constellations that operate in the 17.8 to 20.2 GHz frequency range. The proposed architecture uses four variable gain amplifiers (VGA) that are active at any given time and are switched to generate the four quadrants. Compared to conventional architectures, this structure is more compact and produces double the output amplitude. The design offers 6-bit phase control for 360°, and the total root mean square (RMS) phase and gain errors are 2.36° and 1.46 dB, respectively. The design occupies an area of 1309.4 μm × 1783.8 μm (including pads).
نوع الوثيقة: text
وصف الملف: application/pdf
اللغة: English
Relation: D1: Semiconductor Devices; https://dx.doi.org/10.3390/mi14061184
DOI: 10.3390/mi14061184
الاتاحة: https://doi.org/10.3390/mi14061184
Rights: https://creativecommons.org/licenses/by/4.0/
رقم الانضمام: edsbas.ECCB5794
قاعدة البيانات: BASE