التفاصيل البيبلوغرافية
| العنوان: |
Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs |
| المؤلفون: |
Cui M, Zhou TF, Wang MR, Huang J, Huang HJ, Zhang JP, Xu K, Yang H, Cui, M (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China, tfzhou2007@sinano.ac.cn, kxu2006@sinano.ac.cn |
| سنة النشر: |
2011 |
| المجموعة: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| مصطلحات موضوعية: |
Light-emitting-diodes, Temperature-measurements, Gan, Scattering, Dependence, Junction, Phonons, Aln, 半导体器件, light emitting diodes, temperature measurements, potential scattering, dependency, leds (light emitting diodes), led, organic light emitting diodes, oled, polymer led, superluminescent diodes, led (diodes), light-emitting diodes, leds, organic led, light emitting diode, 计温学, thermometers and thermometry, heat--measurement, heat measurements, temperature--measurement, thermometry |
| الوصف: |
A comprehensive temperature characterization method based on the GaNE(2)-high Raman mode and sapphire ruby R fluorescence lines from Raman spectra was developed to analyse the thermal distribution and heat transfer process of high-power flip-chip InGaN/GaN LEDs (FC LEDs). Our analysis demonstrated that in addition to the known problem that the edges of mesa were always the hottest point of FC LEDs, which was due to the current crowding effect, a noteworthy temperature difference was first observed between the sapphire substrate and n-GaN when the injection current was above 300 mA. A 'heat reservoir' was suggested to occur at the interface between the sapphire and n-GaN due to poor thermal conductivity of sapphire when a large amount of heat from the hottest spot cannot be effectively transferred to the Si mount via the active region under high injection currents. |
| نوع الوثيقة: |
report |
| اللغة: |
English |
| Relation: |
JOURNAL OF PHYSICS D-APPLIED PHYSICS; Cui M; Zhou TF; Wang MR; Huang J; Huang HJ; Zhang JP; Xu K; Yang H.Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs,JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(35):355101; http://ir.semi.ac.cn/handle/172111/22771 |
| الاتاحة: |
http://ir.semi.ac.cn/handle/172111/22771 |
| رقم الانضمام: |
edsbas.EB402A37 |
| قاعدة البيانات: |
BASE |