التفاصيل البيبلوغرافية
| العنوان: |
Variability and reliability analysis in self-assembled multichannel carbon nanotube field-effect transistors ; Applied Physics Letters |
| المؤلفون: |
Hu, Zhaoying, Tulevski, George S., Hannon, James B., Afzali, Ali, Liehr, Michael, Park, Hongsik |
| بيانات النشر: |
Applied Physics Letters |
| سنة النشر: |
2015 |
| المجموعة: |
The State University of New York: SUNY Digital Repository |
| مصطلحات موضوعية: |
carbon nanotubes, channel material, scaled transistor, high-speed logic application, low-power logic application, drive current, logic device, field-effect transistor, self-assembly, compact statistical model, Monte Carlo simulation |
| الوصف: |
Carbon nanotubes (CNTs) have been widely studied as a channel material of scaled transistors for high-speed and low-power logic applications. In order to have sufficient drive current, it is widely assumed that CNT-based logic devices will have multiple CNTs in each channel. Understanding the effects of the number of CNTs on device performance can aid in the design of CNT field-effect transistors (CNTFETs). We have fabricated multi-CNT-channel CNTFETs with an 80-nm channel length using precise self-assembly methods. We describe compact statistical models and Monte Carlo simulations to analyze failure probability and the variability of the on-state current and threshold voltage. The results show that multichannel CNTFETs are more resilient to process variation and random environmental fluctuations than single-CNT devices. ; College of Nanoscale Science and Engineering, The State University of New York at Albany, Albany, New York 12203, USA, IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA, School of Electronics Engineering, Kyungpook National University, Daegu 702-701, South Korea |
| نوع الوثيقة: |
article in journal/newspaper |
| وصف الملف: |
application/pdf |
| اللغة: |
English |
| تدمد: |
0003-6951 |
| Relation: |
Hu, Z., Tulevski, G. S., Hannon, J. B., Afzali, A., Liehr, M., & Park, H. (2015). Variability and reliability analysis in self-assembled multichannel carbon nanotube field-effect transistors. Applied Physics Letters, 106, 243106. doi:10.1063/1.4922770; http://hdl.handle.net/1951/68950 |
| الاتاحة: |
http://hdl.handle.net/1951/68950 |
| رقم الانضمام: |
edsbas.E942D35C |
| قاعدة البيانات: |
BASE |