Academic Journal
Coupling modification of Fermi level, band flattening and lattice defects to approach outstanding thermoelectric performance of ZnO films via tuning In and Ga incorporation
العنوان: | Coupling modification of Fermi level, band flattening and lattice defects to approach outstanding thermoelectric performance of ZnO films via tuning In and Ga incorporation |
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المؤلفون: | Pham, Anh Tuan Thanh, Le, Oanh Kieu Truong, Van Hoang, Dung, Nguyen, Truong Huu, Chen, Kuei-Hsien, Park, Sungkyun, Phan, Thang Bach, Tran, Vinh Cao |
المصدر: | Acta Materialia ; volume 241, page 118415 ; ISSN 1359-6454 |
بيانات النشر: | Elsevier BV |
سنة النشر: | 2022 |
المجموعة: | ScienceDirect (Elsevier - Open Access Articles via Crossref) |
نوع الوثيقة: | article in journal/newspaper |
اللغة: | English |
DOI: | 10.1016/j.actamat.2022.118415 |
الاتاحة: | http://dx.doi.org/10.1016/j.actamat.2022.118415 https://api.elsevier.com/content/article/PII:S1359645422007923?httpAccept=text/xml https://api.elsevier.com/content/article/PII:S1359645422007923?httpAccept=text/plain |
Rights: | https://www.elsevier.com/tdm/userlicense/1.0/ |
رقم الانضمام: | edsbas.E8FBFE |
قاعدة البيانات: | BASE |
DOI: | 10.1016/j.actamat.2022.118415 |
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