Academic Journal

Coupling modification of Fermi level, band flattening and lattice defects to approach outstanding thermoelectric performance of ZnO films via tuning In and Ga incorporation

التفاصيل البيبلوغرافية
العنوان: Coupling modification of Fermi level, band flattening and lattice defects to approach outstanding thermoelectric performance of ZnO films via tuning In and Ga incorporation
المؤلفون: Pham, Anh Tuan Thanh, Le, Oanh Kieu Truong, Van Hoang, Dung, Nguyen, Truong Huu, Chen, Kuei-Hsien, Park, Sungkyun, Phan, Thang Bach, Tran, Vinh Cao
المصدر: Acta Materialia ; volume 241, page 118415 ; ISSN 1359-6454
بيانات النشر: Elsevier BV
سنة النشر: 2022
المجموعة: ScienceDirect (Elsevier - Open Access Articles via Crossref)
نوع الوثيقة: article in journal/newspaper
اللغة: English
DOI: 10.1016/j.actamat.2022.118415
الاتاحة: http://dx.doi.org/10.1016/j.actamat.2022.118415
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Rights: https://www.elsevier.com/tdm/userlicense/1.0/
رقم الانضمام: edsbas.E8FBFE
قاعدة البيانات: BASE
الوصف
DOI:10.1016/j.actamat.2022.118415