التفاصيل البيبلوغرافية
| العنوان: |
Direct Laser Irradiation and Modification of 2D Te for Development of Volatile Memristor |
| المؤلفون: |
Genwang Wang, Yanchao Guan, Yang Wang, Ye Ding, Lijun Yang |
| المصدر: |
Materials; Volume 16; Issue 2; Pages: 738 |
| بيانات النشر: |
Multidisciplinary Digital Publishing Institute |
| سنة النشر: |
2023 |
| المجموعة: |
MDPI Open Access Publishing |
| مصطلحات موضوعية: |
laser irradiation, tellurene, defects, oxides, volatile memristor |
| الوصف: |
Laser irradiation, as a kind of post-fabrication method for two-dimensional (2D) materials, is a promising way to tune the properties of materials and the performance of corresponding nano-devices. As the memristor has been regarded as an excellent candidate for in-memory devices in next-generation computing system, the application of laser irradiation in developing excellent memristor based on 2D materials should be explored deeply. Here, tellurene (Te) flakes are exposed to a 532 nm laser in the air atmosphere to investigate the evolutions of the surface morphology and atom structures under different irradiation parameters. Laser is capable of thinning the flakes, inducing amorphous structures, oxides and defects, and forming nanostructures by controlling the irradiation power and time. Furthermore, the laser-induced oxides and defects promote the migration of metal ions in Te, resulting in the formation of the conductive filaments, which provides the switching behavers of volatile memristor, opening a route to the development of next-generation nano-devices. |
| نوع الوثيقة: |
text |
| وصف الملف: |
application/pdf |
| اللغة: |
English |
| Relation: |
Manufacturing Processes and Systems; https://dx.doi.org/10.3390/ma16020738 |
| DOI: |
10.3390/ma16020738 |
| الاتاحة: |
https://doi.org/10.3390/ma16020738 |
| Rights: |
https://creativecommons.org/licenses/by/4.0/ |
| رقم الانضمام: |
edsbas.E8F90A3D |
| قاعدة البيانات: |
BASE |