التفاصيل البيبلوغرافية
| العنوان: |
Role of Interfacial Oxide in the Preferred Orientation of Ga 2 O 3 on Si for Deep Ultraviolet Photodetectors |
| المؤلفون: |
Chao-Chun Yen (5514134), Tsun-Min Huang (11580303), Po-Wei Chen (416504), Kai-Ping Chang (144672), Wan-Yu Wu (4382233), Dong-Sing Wuu (11580306) |
| سنة النشر: |
2021 |
| المجموعة: |
Smithsonian Institution: Digital Repository |
| مصطلحات موضوعية: |
Medicine, Biotechnology, Ecology, Space Science, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, transmission electron microscopy, deep ultraviolet photodetectors, 91 × 10, 800 ° c, 600 ° c, 5 v bias, 1000 ° c, slight random orientation, native amorphous nano, type silicon (<, preferred orientation prepared, peak , oxide film formed, dark , ), 2 , 2 , amorphous silicon oxide, 3 , 100 )/ sio, preferred orientation, , interfacial oxide |
| الوصف: |
It is generally known that a layer of amorphous silicon oxide (SiO 2 ) naturally exists on the surface of silicon, resulting in the growth of gallium oxide (Ga 2 O 3 ) that is no longer affected by substrate crystallinity during sputtering. This work highlights the formation energy between the native amorphous nano-oxide film formed on the Si substrate and monoclinic β-Ga 2 O 3 dominating the preferred orientation prepared for deep ultraviolet photodetectors. The latter were deposited on p-type silicon ( p -Si) with (111) orientation using radio frequency sputtering at 600 °C and post rapid thermal annealing (RTA). The X-ray diffraction (XRD) results indicate both as-deposited and postannealing films with the (400) preferred orientation for a layer thickness of 100 nm. However, slight random orientation with the amorphous structure is mixed in the preferred one for the as-deposited film with a thickness of 200 nm and reduced after being annealed at 800 °C, which is observed by XRD and transmission electron microscopy. Meanwhile, thermal-induced massive twin boundaries (TBs) and stacking faults (SFs) were generated when annealed at 1000 °C, owing to the relaxation of lattice strain by the coherent interface. The interfacial bonding energy per unit area ( E i ) between β-Ga 2 O 3 films with various facets ((001), (010), (100), and (2̅01)) and amorphous SiO 2 was calculated using density functional theory. The E i of β-Ga 2 O 3 (100)/SiO 2 reveals the highest value (0.289 eV/Å 2 ), which is consistent with the (100) preferred orientation of deposited films. The (100) preferred orientation is the driving force for TBs and SFs. The discrimination of responsivities and the photo/dark current contrast ratio ( I ph / I dark ) are inversely proportional to the amorphous structure, grain boundaries, TBs, and SFs. Therefore, optimum metal–semiconductor–metal photodetector performance is achieved for RTA-treated samples at 800 °C with an I ph / I dark of 3.91 × 10 2 and a responsivity of 0.702 A/W (λ peak = 230 nm) at 5 V ... |
| نوع الوثيقة: |
article in journal/newspaper |
| اللغة: |
unknown |
| Relation: |
https://figshare.com/articles/journal_contribution/Role_of_Interfacial_Oxide_in_the_Preferred_Orientation_of_Ga_sub_2_sub_O_sub_3_sub_on_Si_for_Deep_Ultraviolet_Photodetectors/16832130 |
| DOI: |
10.1021/acsomega.1c04380.s001 |
| الاتاحة: |
https://doi.org/10.1021/acsomega.1c04380.s001 |
| Rights: |
CC BY-NC 4.0 |
| رقم الانضمام: |
edsbas.E4D5BEBE |
| قاعدة البيانات: |
BASE |