Academic Journal
Fe implantation effect in the 6H-SiC semiconductor investigated by Mössbauer spectrometry
| العنوان: | Fe implantation effect in the 6H-SiC semiconductor investigated by Mössbauer spectrometry |
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| المؤلفون: | Diallo, M.L., Diallo, L., Fnidiki, A., Lechevallier, L., Cuvilly, F., Blum, I., Viret, M., Marteau, M., Eyidi, D., Juraszek, J., Declémy, A. |
| المساهمون: | Groupe de physique des matériaux (GPM), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU), Laboratoire Nano-Magnétisme et Oxydes (LNO), Service de physique de l'état condensé (SPEC - UMR3680), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Institut Pprime (PPRIME), Université de Poitiers-ENSMA-Centre National de la Recherche Scientifique (CNRS) |
| المصدر: | ISSN: 0021-8979. |
| بيانات النشر: | HAL CCSD American Institute of Physics |
| سنة النشر: | 2017 |
| المجموعة: | Archive ouverte HAL (Hyper Article en Ligne, CCSD - Centre pour la Communication Scientifique Directe) |
| مصطلحات موضوعية: | [PHYS]Physics [physics] |
| الوصف: | International audience ; P-doped 6H-SiC substrates were implanted with $^{57}$Fe ions at 380°C or 550°C to produce a diluted magnetic semiconductor with an Fe homogeneous concentration of about 100 nm thickness. The magnetic properties were studied with $^{57}$Fe Conversion Electron Mössbauer Spectrometry at room temperature (RT). Results obtained by this technique on annealed samples prove that ferromagnetism in $^{57}$Fe-implanted SiC for Fe concentrations close to 2% and 4% is mostly due to Fe atoms diluted in the matrix. In contrast, for Fe concentrations close to 6%, it also comes from Fe in magnetic phase nano-clusters. This study allows quantifying the Fe amount in the interstitial and substi-tutional sites and the nanoparticles and shows that the majority of the diluted Fe atoms are substituted on Si sites inducing ferromagnetism up to RT. Published by AIP Publishing. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| Relation: | cea-01591469; https://hal-cea.archives-ouvertes.fr/cea-01591469; https://hal-cea.archives-ouvertes.fr/cea-01591469/document; https://hal-cea.archives-ouvertes.fr/cea-01591469/file/2E4992102_2.pdf |
| DOI: | 10.1063/1.4992102 |
| الاتاحة: | https://hal-cea.archives-ouvertes.fr/cea-01591469 https://hal-cea.archives-ouvertes.fr/cea-01591469/document https://hal-cea.archives-ouvertes.fr/cea-01591469/file/2E4992102_2.pdf https://doi.org/10.1063/1.4992102 |
| Rights: | info:eu-repo/semantics/OpenAccess |
| رقم الانضمام: | edsbas.E2671D86 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1063/1.4992102 |
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