التفاصيل البيبلوغرافية
| العنوان: |
Influence of Co-Sputtered Ag:Al Ultra-Thin Layers in Transparent V2O5/Ag:Al/AZO Hole-Selective Electrodes for Silicon Solar Cells |
| المؤلفون: |
Thomas Tom, Eloi Ros, Nicolau López-Pintó, José Miguel Asensi, Jordi Andreu, Joan Bertomeu, Joaquim Puigdollers, Cristobal Voz |
| المصدر: |
Materials; Volume 13; Issue 21; Pages: 4905 |
| بيانات النشر: |
Multidisciplinary Digital Publishing Institute |
| سنة النشر: |
2020 |
| المجموعة: |
MDPI Open Access Publishing |
| مصطلحات موضوعية: |
heterojunctions, contacts, silicon, solar cells, sputtering, transparent films, transition metal oxide |
| الوصف: |
As optoelectronic devices continue to improve, control over film thickness has become crucial, especially in applications that require ultra-thin films. A variety of undesired effects may arise depending on the specific growth mechanism of each material, for instance a percolation threshold thickness is present in Volmer-Webber growth of materials such as silver. In this paper, we explore the introduction of aluminum in silver films as a mechanism to grow ultrathin metallic films of high transparency and low sheet resistance, suitable for many optoelectronic applications. Furthermore, we implemented such ultra-thin metallic films in Dielectric/Metal/Dielectric (DMD) structures based on Aluminum-doped Zinc Oxide (AZO) as the dielectric with an ultra-thin silver aluminum (Ag:Al) metallic interlayer. The multilayer structures were deposited by magnetron sputtering, which offers an industrial advantage and superior reliability over thermally evaporated DMDs. Finally, we tested the optimized DMD structures as a front contact for n-type silicon solar cells by introducing a hole-selective vanadium pentoxide (V2O5) dielectric layer. |
| نوع الوثيقة: |
text |
| وصف الملف: |
application/pdf |
| اللغة: |
English |
| Relation: |
Thin Films and Interfaces; https://dx.doi.org/10.3390/ma13214905 |
| DOI: |
10.3390/ma13214905 |
| الاتاحة: |
https://doi.org/10.3390/ma13214905 |
| Rights: |
https://creativecommons.org/licenses/by/4.0/ |
| رقم الانضمام: |
edsbas.E1AF5750 |
| قاعدة البيانات: |
BASE |