Academic Journal
A Pseudo Two-Dimensional Threshold Voltage Model for Low-Power Semiconductor Device PNIN Double-Gate-Tunneling Field Effect Transistor
| العنوان: | A Pseudo Two-Dimensional Threshold Voltage Model for Low-Power Semiconductor Device PNIN Double-Gate-Tunneling Field Effect Transistor |
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| المؤلفون: | Zhao-Ming, Hao, Yu-Chen, Li |
| المصدر: | Journal of Computational and Theoretical Nanoscience ; volume 13, issue 8, page 5454-5457 ; ISSN 1546-1955 |
| بيانات النشر: | American Scientific Publishers |
| سنة النشر: | 2016 |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1166/jctn.2016.5438 |
| الاتاحة: | http://dx.doi.org/10.1166/jctn.2016.5438 http://www.ingentaconnect.com/content/asp/jctn/2016/00000013/00000008/art00086 |
| رقم الانضمام: | edsbas.E0F92638 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1166/jctn.2016.5438 |
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