Academic Journal
Depth and radial profiles of defects in Czochralski-grown silicon
| العنوان: | Depth and radial profiles of defects in Czochralski-grown silicon |
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| المؤلفون: | Sharma, S. C., Hyer, R. C., Hozhabri, N., Pas, M. F., Kim, S. |
| المصدر: | Applied Physics Letters ; volume 61, issue 16, page 1939-1941 ; ISSN 0003-6951 1077-3118 |
| بيانات النشر: | AIP Publishing |
| سنة النشر: | 1992 |
| الوصف: | We have studied the depth and spatial profiles of vacancies in Czochralski-grown silicon wafers by positron annihilation spectroscopy. By using a variable energy positron beam and γ-ray spectroscopy, we have obtained depth profiles of defects in as-grown, annealed, and 〈100〉 epitaxial Si wafers. We discuss these results in terms of vacancies and oxygen precipitates. The bulk position lifetime measurements, made as a function of axial displacement of a positron source, resolve vacancies, and divacancies in the wafer. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1063/1.108369 |
| الاتاحة: | http://dx.doi.org/10.1063/1.108369 https://pubs.aip.org/aip/apl/article-pdf/61/16/1939/18491534/1939_1_online.pdf |
| رقم الانضمام: | edsbas.E08F9E07 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1063/1.108369 |
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