Academic Journal

Eliminating the Double-Slope Behavior of Organic Field-Effect Transistors by Functionalizing the Dielectric Surface With a High Electron Affinity Self-Assembly Monolayer

التفاصيل البيبلوغرافية
العنوان: Eliminating the Double-Slope Behavior of Organic Field-Effect Transistors by Functionalizing the Dielectric Surface With a High Electron Affinity Self-Assembly Monolayer
المؤلفون: Hu, Yuanhong, Fu, Huaijie, Zhang, Qiaoming, Peng, Jinlei, Wei, Jiyuan, Tan, Xingwen, Qiu, Xuejun, Lei, Yanlian
المساهمون: Fundamental Research Funds for the Central Universities, Natural Science Foundation Project of Chongqing Science and Technology Commission, Science and Technology Research Program of Chongqing Municipal Education Commission, Venture and Innovation Support Program for Chongqing Overseas Returnees
المصدر: IEEE Transactions on Electron Devices ; volume 71, issue 1, page 777-781 ; ISSN 0018-9383 1557-9646
بيانات النشر: Institute of Electrical and Electronics Engineers (IEEE)
سنة النشر: 2024
نوع الوثيقة: article in journal/newspaper
اللغة: unknown
DOI: 10.1109/ted.2023.3338152
الاتاحة: http://dx.doi.org/10.1109/ted.2023.3338152
http://xplorestaging.ieee.org/ielx7/16/10382412/10354044.pdf?arnumber=10354044
Rights: https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html ; https://doi.org/10.15223/policy-029 ; https://doi.org/10.15223/policy-037
رقم الانضمام: edsbas.DE3DA757
قاعدة البيانات: BASE
الوصف
DOI:10.1109/ted.2023.3338152