Academic Journal
Electrical Effect of Nitrogen Implanted Into LDD of MOSFETs
| العنوان: | Electrical Effect of Nitrogen Implanted Into LDD of MOSFETs |
|---|---|
| المؤلفون: | Song, Yoo Seon, Lenski, Markus, Karim, Mohammed F., Flynn, Keith, Hoentschel, Jan, Peters, Carsten, Sachse, Jens-Uwe, Aydin, Ömür Işıl, Wu, Jun, Haußdörfer, Bastian, Siddabathula, Mahesh, Semmler, Konrad, Daleiden, Jürgen |
| المساهمون: | European Union within "NextGeneration EU" |
| المصدر: | IEEE Journal of the Electron Devices Society ; volume 12, page 627-636 ; ISSN 2168-6734 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE) |
| سنة النشر: | 2024 |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | unknown |
| DOI: | 10.1109/jeds.2024.3442474 |
| الاتاحة: | http://dx.doi.org/10.1109/jeds.2024.3442474 http://xplorestaging.ieee.org/ielx8/6245494/10416702/10634165.pdf?arnumber=10634165 |
| Rights: | https://creativecommons.org/licenses/by/4.0/legalcode |
| رقم الانضمام: | edsbas.DD6E6B94 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1109/jeds.2024.3442474 |
|---|