Academic Journal
Electron Beam Pumping in Nitride Vertical Cavities with GaN/ Al 0.25 Ga 0.75 N Bragg Reflectors
| العنوان: | Electron Beam Pumping in Nitride Vertical Cavities with GaN/ Al 0.25 Ga 0.75 N Bragg Reflectors |
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| المؤلفون: | Klausing, H., Aderhold, J., Fedler, F., Mistele, D., Stemmer, J., Semchinova, O., Graul, J., Dänhardt, J., Panzer, S. |
| المصدر: | MRS Internet Journal of Nitride Semiconductor Research ; volume 5, issue S1, page 654-660 ; ISSN 1092-5783 |
| بيانات النشر: | Springer Science and Business Media LLC |
| سنة النشر: | 2000 |
| الوصف: | Electron beam pumped surface emitting lasers are of great interest for a variety of applications, such as Laser Cathode Ray Tubes (LCRT) in projection display technology or high power UV light sources for photolithography. Two distributed Bragg reflector (DBR) samples were grown by plasma assisted molecular beam epitaxy (PAMBE). The active regions of the samples are a GaN:Si bulk layer and a multihetero (MH) structure, respectively. Also, a separately grown single DBR stack was studied to find optical transmission and reflection properties which were compared to transfer matrix simulations. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1557/s1092578300004890 |
| الاتاحة: | http://dx.doi.org/10.1557/s1092578300004890 https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1092578300004890 |
| Rights: | https://www.cambridge.org/core/terms |
| رقم الانضمام: | edsbas.DC647573 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1557/s1092578300004890 |
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