Academic Journal

Co-Optimization of a-InGaZnO Framework for Enhancing Thin Film Transistors Stability and Electrical Properties

التفاصيل البيبلوغرافية
العنوان: Co-Optimization of a-InGaZnO Framework for Enhancing Thin Film Transistors Stability and Electrical Properties
المؤلفون: Song, Yongle, Wang, Chunlan, Jiao, Yuchao, Liu, Xiaohong, Duan, Nan, Qin, Zihan, Wang, Jingli
المساهمون: National Natural Science Foundation of China, Science and Technology Program of Shaanxi Province, Opening Project of Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, Jianghan University, Program of State Key Laboratory of Infrared Physics, Program of the Key Laboratory of Artificial Microstructure, Ministry of Education
المصدر: IEEE Transactions on Electron Devices ; volume 71, issue 6, page 3678-3683 ; ISSN 0018-9383 1557-9646
بيانات النشر: Institute of Electrical and Electronics Engineers (IEEE)
سنة النشر: 2024
نوع الوثيقة: article in journal/newspaper
اللغة: unknown
DOI: 10.1109/ted.2024.3388413
الاتاحة: http://dx.doi.org/10.1109/ted.2024.3388413
http://xplorestaging.ieee.org/ielx7/16/10538150/10500760.pdf?arnumber=10500760
Rights: https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html ; https://doi.org/10.15223/policy-029 ; https://doi.org/10.15223/policy-037
رقم الانضمام: edsbas.D82CCCF6
قاعدة البيانات: BASE
الوصف
DOI:10.1109/ted.2024.3388413