Academic Journal
A breakthrough for temperature and linearity stability from device to circuit-level with 14 nm junctionless SOI FinFET: Advancing K-band LNA performance
| العنوان: | A breakthrough for temperature and linearity stability from device to circuit-level with 14 nm junctionless SOI FinFET: Advancing K-band LNA performance |
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| المؤلفون: | Khodabakhsh, Amir, Fallahnejad, Mohammad, Vadizadeh, Mahdi |
| المصدر: | Microelectronics Reliability ; volume 152, page 115278 ; ISSN 0026-2714 |
| بيانات النشر: | Elsevier BV |
| سنة النشر: | 2024 |
| المجموعة: | ScienceDirect (Elsevier - Open Access Articles via Crossref) |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1016/j.microrel.2023.115278 |
| الاتاحة: | http://dx.doi.org/10.1016/j.microrel.2023.115278 https://api.elsevier.com/content/article/PII:S0026271423003785?httpAccept=text/xml https://api.elsevier.com/content/article/PII:S0026271423003785?httpAccept=text/plain |
| Rights: | https://www.elsevier.com/tdm/userlicense/1.0/ ; https://doi.org/10.15223/policy-017 ; https://doi.org/10.15223/policy-037 ; https://doi.org/10.15223/policy-012 ; https://doi.org/10.15223/policy-029 ; https://doi.org/10.15223/policy-004 |
| رقم الانضمام: | edsbas.D7CC23D5 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1016/j.microrel.2023.115278 |
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