Academic Journal
Recombination processes in passivated boron-implanted black silicon emitters
| العنوان: | Recombination processes in passivated boron-implanted black silicon emitters |
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| المؤلفون: | von Gastrow, Guillaume, Ortega Villasclaras, Pablo Rafael, Alcubilla González, Ramón, Husein, Sebastian, Nietzold, Tara, Bertoni, Mariana, Savin, Hele |
| المساهمون: | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
| بيانات النشر: | American Institute of Physics (AIP) |
| سنة النشر: | 2017 |
| المجموعة: | Universitat Politècnica de Catalunya (UPC): Tesis Doctorals en Xarxa (TDX) / Theses and Dissertations Online |
| مصطلحات موضوعية: | Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica, Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars, Solar cells, Recombination processes, Passivated boron-implanted black silicon emitters, bSi emmitters, Ion-implanted black silicon emitters, High-efficiency solar cells, Surface nanostructuring, Cèl·lules solars |
| الوصف: | In this paper, we study the recombination mechanisms in ion-implanted black silicon (bSi) emitters and discuss their advantages over diffused emitters. In the case of diffusion, the large bSi surface area increases emitter doping and consequently Auger recombination compared to a planar surface. The total doping dose is on the contrary independent of the surface area in implanted emitters, and as a result, we show that ion implantation allows control of emitter doping without compromise in the surface aspect ratio. The possibility to control surface doping via implantation anneal becomes highly advantageous in bSi emitters, where surface passivation becomes critical due to the increased surface area. We extract fundamental surface recombination velocities Sn through numerical simulations and obtain the lowest values at the highest anneal temperatures. With these conditions, an excellent emitter saturation current (J0e) is obtained in implanted bSi emitters, reaching 20 fA/cm2 ± 5 fA/cm2 at a sheet resistance of 170 O/sq. Finally, we identify the different regimes of recombination in planar and bSi emitters as a function of implantation anneal temperature. Based on experimental data and numerical simulations, we show that surface recombination can be reduced to a negligible contribution in implanted bSi emitters, which explains the low J0e obtained. ; Postprint (published version) |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| تدمد: | 0021-8979 |
| Relation: | von Gastrow, G., Ortega, P., Alcubilla, R., Husein, S., Nietzold, T., Bertoni, M., Savin, H. Recombination processes in passivated boron-implanted black silicon emitters. "Journal of applied physics", 14 Maig 2017, vol. 121, núm. 18, p. 185706-1-185706-7.; http://hdl.handle.net/2117/104958 |
| DOI: | 10.1063/1.4983297 |
| الاتاحة: | http://hdl.handle.net/2117/104958 https://doi.org/10.1063/1.4983297 |
| Rights: | Open Access |
| رقم الانضمام: | edsbas.D7055120 |
| قاعدة البيانات: | BASE |
| تدمد: | 00218979 |
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| DOI: | 10.1063/1.4983297 |