Conference
Capacitance-voltage characterization of Al 2 O 3 /GaN-on-insulator (GaNOI) structures with TMAH surface treatment
| العنوان: | Capacitance-voltage characterization of Al 2 O 3 /GaN-on-insulator (GaNOI) structures with TMAH surface treatment |
|---|---|
| المؤلفون: | Im, Ki-Sik, Kim, Jeong-Gil, Vodapally, Sindhuri, Caulmilone, Raphaël, Cristoloveanu, Sorin, Lee, Jung-Hee |
| المساهمون: | Kyungpook National University Daegu (KNU), Silicon-on-Insulator Technologies (SOITEC), Parc Technologique des Fontaines, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 ) |
| المصدر: | 20th International Conference on Insulating Films on Semiconductors (INFOS 2017) https://hal.science/hal-02071672 20th International Conference on Insulating Films on Semiconductors (INFOS 2017), Jun 2017, Potsdam, Germany |
| بيانات النشر: | CCSD |
| سنة النشر: | 2017 |
| المجموعة: | Université Savoie Mont Blanc: HAL |
| مصطلحات موضوعية: | Frequency dispersion, GaN-on-insulator (GaNOI), C-V characteristics, Interface trap density, TMAH surface treatment, GaN, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics |
| جغرافية الموضوع: | Potsdam, Germany |
| الوصف: | International audience |
| نوع الوثيقة: | conference object |
| اللغة: | English |
| الاتاحة: | https://hal.science/hal-02071672 |
| رقم الانضمام: | edsbas.D5E9DFE5 |
| قاعدة البيانات: | BASE |
| الوصف غير متاح. |