Academic Journal
Lateral 1.8 kV $\beta$ -Ga 2 O 3 MOSFET With 155 MW/cm 2 Power Figure of Merit
العنوان: | Lateral 1.8 kV $\beta$ -Ga 2 O 3 MOSFET With 155 MW/cm 2 Power Figure of Merit |
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المؤلفون: | Tetzner, Kornelius, Bahat Treidel, Eldad, Hilt, Oliver, Popp, Andreas, Bin Anooz, Saud, Wagner, Gunter, Thies, Andreas, Ickert, Karina, Gargouri, Hassan, Wurfl, Joachim |
المساهمون: | Bundesministerium für Bildung und Forschung |
المصدر: | IEEE Electron Device Letters ; volume 40, issue 9, page 1503-1506 ; ISSN 0741-3106 1558-0563 |
بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE) |
سنة النشر: | 2019 |
نوع الوثيقة: | article in journal/newspaper |
اللغة: | unknown |
DOI: | 10.1109/led.2019.2930189 |
الاتاحة: | http://dx.doi.org/10.1109/led.2019.2930189 http://xplorestaging.ieee.org/ielx7/55/8811651/08768350.pdf?arnumber=8768350 |
Rights: | https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html ; https://doi.org/10.15223/policy-029 ; https://doi.org/10.15223/policy-037 |
رقم الانضمام: | edsbas.D53490E3 |
قاعدة البيانات: | BASE |
DOI: | 10.1109/led.2019.2930189 |
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