Academic Journal
Electrical control of optically pumped electron spin in a single GaAs/AlAs quantum dot fabricated by nanohole infilling
| العنوان: | Electrical control of optically pumped electron spin in a single GaAs/AlAs quantum dot fabricated by nanohole infilling |
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| المؤلفون: | Germanis, S., Atkinson, P, Hostein, R., Suffit, S., Margaillan, F., Voliotis, V, Eble, B. |
| المساهمون: | Photons, Magnons et Technologies Quantiques (INSP-E11), Institut des Nanosciences de Paris (INSP), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Croissance et propriétés de systèmes hybrides en couches minces (INSP-E8), Laboratoire Matériaux et Phénomènes Quantiques (MPQ (UMR_7162)), Centre National de la Recherche Scientifique (CNRS)-Université Paris Cité (UPCité), ANR-18-CE47-0006,I-SQUAD,Boîte et molécule quantiques semi-conductrices localisées pour l'optique quantique intégrée(2018), ANR-17-CE30-0022,SPINEX,Effets associés au spin et aux excitons dans les boîtes quantiques de GaAs/AlGaAs(2017) |
| المصدر: | ISSN: 0163-1829 ; EISSN: 1095-3795. |
| بيانات النشر: | HAL CCSD American Physical Society |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph] |
| الوصف: | International audience ; We demonstrate here electrical control of the sign of the circularly polarized emission from the negatively charged trion, going from co-to contrapolarized with respect to the circular polarization of the laser, using a GaAs/AlAs quantum dot (QD) embedded in a field effect structure. The voltage range over which the trion is negatively (contra) circularly polarized is shown to be dependent on the laser excitation energy within the P-shell resonance. The negative polarization never exceeds ∼ − 15%, in stark contrast to measurements on InAs/GaAs QDs reported by M. E. Ware et al. [Phys. Rev. Lett. 95, 177403 (2005).] in which a negative polarization reaching −95% was observed. This result is shown to be a consequence of the low-symmetry confinement potential of these GaAs/AlAs QD, which are fabricated by partial infilling of asymmetric droplet-etched nanoholes. This low QD symmetry also leads to optical activity of the dark spin configuration of the triplet state, which we measure experimentally by photoluminescence excitation spectroscopy. A simple, semiquantitative model explaining both the optical activity of the dark spin configuration and the maximum degree of negative polarization is presented. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| Relation: | hal-02891496; https://hal.science/hal-02891496; https://hal.science/hal-02891496/document; https://hal.science/hal-02891496/file/PhysRevB.102.035406.pdf |
| DOI: | 10.1103/PhysRevB.102.035406 |
| الاتاحة: | https://hal.science/hal-02891496 https://hal.science/hal-02891496/document https://hal.science/hal-02891496/file/PhysRevB.102.035406.pdf https://doi.org/10.1103/PhysRevB.102.035406 |
| Rights: | info:eu-repo/semantics/OpenAccess |
| رقم الانضمام: | edsbas.D38C942E |
| قاعدة البيانات: | BASE |
| DOI: | 10.1103/PhysRevB.102.035406 |
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