Academic Journal

Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates

التفاصيل البيبلوغرافية
العنوان: Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates
المؤلفون: Sundaram, S., El Gmili, Y., Puybaret, R., Li, X., Bonanno, P. L., Pantzas, K., Patriarche, G., Voss, P. L., Salvestrini, J. P., Ougazzaden, A.
المساهمون: CNRS INCEPT PEPS Project, French national research agency Ganex Labex, NOVAGAINIS Project
المصدر: Applied Physics Letters ; volume 107, issue 11 ; ISSN 0003-6951 1077-3118
بيانات النشر: AIP Publishing
سنة النشر: 2015
الوصف: We report the metal organic chemical vapor deposition growth of dislocation-free 100 nm thick hexagonal InGaN nanopyramid arrays with up to 33% of indium content by nano-selective area growth on patterned AlN/Si (111) substrates. InGaN grown on SiO2 patterned templates exhibit high selectivity. Their single crystal structure is confirmed by scanning transmission electron microscope combined with an energy dispersive X-ray analysis, which also reveals the absence of threading dislocations in the InGaN nanopyramids due to elastic strain relaxation mechanisms. Cathodoluminescence measurements on a single InGaN nanopyramid clearly show an improvement of the optical properties when compared to planar InGaN grown under the same conditions. The good structural, morphological, and optical quality of the InGaN nanostructures grown on AlN/Si indicates that the nano-selective area growth technology is attractive for the realization of site-controlled indium-rich InGaN nanostructure-based devices and can also be transferred to other highly mismatched substrates.
نوع الوثيقة: article in journal/newspaper
اللغة: English
DOI: 10.1063/1.4931132
DOI: 10.1063/1.4931132/14471579/113105_1_online.pdf
الاتاحة: http://dx.doi.org/10.1063/1.4931132
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4931132/14471579/113105_1_online.pdf
رقم الانضمام: edsbas.D31FDDCA
قاعدة البيانات: BASE