Academic Journal
Low On-Resistance and Low Trapping Effects in 1200 V Superlattice GaN-on-Silicon Heterostructures
| العنوان: | Low On-Resistance and Low Trapping Effects in 1200 V Superlattice GaN-on-Silicon Heterostructures |
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| المؤلفون: | Kabouche R., Abid I., Pusche R., Derluyn J., Degroote S., Germain M., Tajalli A., Meneghini M., Meneghesso G., Medjdoub F. |
| المساهمون: | Kabouche, R., Abid, I., Pusche, R., Derluyn, J., Degroote, S., Germain, M., Tajalli, A., Meneghini, M., Meneghesso, G., Medjdoub, F. |
| بيانات النشر: | Wiley-VCH Verlag |
| سنة النشر: | 2019 |
| المجموعة: | Padua Research Archive (IRIS - Università degli Studi di Padova) |
| مصطلحات موضوعية: | GaN, low on-resistance, low trapping effect, silicon, superlattices |
| الوصف: | Herein, the development of gallium nitride on silicon (GaN-on-Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown that the insertion of superlattices (SLs) into the buffer layers allows pushing the vertical breakdown voltage above 1200 V without generating additional trapping effects as compared with a more standard optimized step-graded AlGaN-based epistructure using a similar total buffer thickness. DC characterizations of fabricated transistors by means of back-gating measurements reflect both the enhancement of the breakdown voltage and the low trapping effects up to 1200 V. These results show that a proper buffer optimization and the insertion of SL pave the way to GaN-on-Si lateral power transistors operating at 1200 V with low on-resistance and low trapping effects. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| Relation: | info:eu-repo/semantics/altIdentifier/wos/WOS:000495491100001; firstpage:1900687; journal:PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE; http://hdl.handle.net/11577/3329687; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85074830684; http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6319 |
| DOI: | 10.1002/pssa.201900687 |
| DOI: | 10.1002/(ISSN)1862-6319 |
| الاتاحة: | http://hdl.handle.net/11577/3329687 https://doi.org/10.1002/pssa.201900687 http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6319 |
| رقم الانضمام: | edsbas.D07FB4E2 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1002/pssa.201900687 |
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