التفاصيل البيبلوغرافية
العنوان: |
Improved carrier management via a multifunctional modifier for high-quality low-bandgap Sn–Pb perovskites and rfficient sll-perovskite tandem solar cells |
المؤلفون: |
Luo, Jincheng, He, Rui, Lai, Huagui, Chen, Cong, Zhu, Jingwei, Xu, Yuliang, Yao, Fang, Ma, Tianshu, Luo, Yi, Yi, Zongjin, Jiang, Yiting, Gao, Zhiyu, Wang, Juncheng, Wang, Wenwu, Huang, Hao, Wang, Ye, Ren, Shengqiang, Lin, Qianqian, Wang, Changlei, Fu, Fan, Zhao, Dewei |
بيانات النشر: |
Wiley |
سنة النشر: |
2023 |
مصطلحات موضوعية: |
all-perovskite tandem solar cells, carrier management, defect passivation, electron transfer, low-bandgap perovskites |
الوصف: |
All-perovskite tandem solar cells (TSCs) hold great promise in terms of ultrahigh efficiency, low manufacturing cost, and flexibility, stepping forward to the next-generation photovoltaics. However, their further development is hampered by the relatively low performance of low-bandgap (LBG) tin (Sn)–lead (Pb) perovskite solar cells (PSCs). Improving the carrier management, including suppressing trap-assisted non-radiative recombination and promoting carrier transfer, is of great significance to enhance the performance of Sn–Pb PSCs. Herein, a carrier management strategy is reported for using cysteine hydrochloride (CysHCl) simultaneously as a bulky passivator and a surface anchoring agent for Sn–Pb perovskite. CysHCl processing effectively reduces trap density and suppresses non-radiative recombination, enabling the growth of high-quality Sn–Pb perovskite with greatly improved carrier diffusion length of >8 µm. Furthermore, the electron transfer at the perovskite/C 60 interface is accelerated due to the formation of surface dipoles and favorable energy band bending. As a result, these advances enable the demonstration of champion efficiency of 22.15% for CysHCl-processed LBG Sn–Pb PSCs with remarkable enhancement in both open-circuit voltage and fill factor. When paired with a wide-bandgap (WBG) perovskite subcell, a certified 25.7%-efficient all-perovskite monolithic tandem device is further demonstrated. |
نوع الوثيقة: |
article in journal/newspaper |
اللغة: |
English |
تدمد: |
0935-9648 |
Relation: |
Advanced Materials--Adv. Mater.--journals:54--0935-9648; empa:34813; scopus: 2-s2.0-85153477809; pmid: 36906929; journal id: journals:54; ut: 000972979400001 |
DOI: |
10.1002/adma.202300352 |
الاتاحة: |
https://doi.org/10.1002/adma.202300352 |
رقم الانضمام: |
edsbas.CF8BA005 |
قاعدة البيانات: |
BASE |