التفاصيل البيبلوغرافية
| العنوان: |
Monolithically integrated high power laser optical device |
| المؤلفون: |
ADAMS, DAVID M., HAYSOM, JOAN E, WOODS, IAN |
| المساهمون: |
LUMENTUM TECHNOLOGY UK LIMITED |
| سنة النشر: |
2006 |
| المجموعة: |
Xi'an Institute of Optics and Precision Mechanics: OPT OpenIR (Chinese Academy of Sciences, CAS) / 中国科学院西安光学精密机械研究所机构知识库 |
| مصطلحات موضوعية: |
H01S5/00 | H01S3/10 | H01S5/026 | H01S5/12 | H01S5/34 | H01S5/40 | H01S5/50 |
| جغرافية الموضوع: |
美国 |
| الوصف: |
An optical device, including a monolithically integrated diode laser and semiconductor optical amplifier, that has reduced linewidth and improved side mode suppression for a given output power target. In a preferred embodiment, the diode laser is detuned from a gain peak wavelength to an emission wavelength. The semiconductor optical amplifier has an active region that is bandgap shifted to move its gain peak towards the emission wavelength of the laser diode, thus reducing its linewidth enhancement factor. The diode laser is preferably either a gain-coupled or index-coupled distributed feedback laser. The bandgap shift can be effected by known bandgap shifting methods, such as ion implantation, dielectric cap disordering, and laser induced disordering. |
| نوع الوثيقة: |
other/unknown material |
| اللغة: |
unknown |
| Relation: |
http://ir.opt.ac.cn/handle/181661/39223 |
| الاتاحة: |
http://ir.opt.ac.cn/handle/181661/39223 |
| Rights: |
cn.org.cspace.api.content.CopyrightPolicy@3e7b3df1 |
| رقم الانضمام: |
edsbas.CEAE5CF0 |
| قاعدة البيانات: |
BASE |