Academic Journal

Effect of rapid thermal annealing on damage of silicon matrix implanted by low-energy rhenium ions

التفاصيل البيبلوغرافية
العنوان: Effect of rapid thermal annealing on damage of silicon matrix implanted by low-energy rhenium ions
المؤلفون: Demchenko, I.N., Melikhov, Y., Walczak, M.S., Ratajczak, R., Sobczak, K., Barcz, A., Minikaev, R., Dynowska, E., Domagala, J.Z., Chernyshova, M., Syryanyy, Y., Gavrilov, N.V., Sawicki, M.
المساهمون: TEM, Interdisciplinary Centre for Mathematical and Computational Modelling (ICM) at University of Warsaw, Poland
المصدر: Journal of Alloys and Compounds ; volume 846, page 156433 ; ISSN 0925-8388
بيانات النشر: Elsevier BV
سنة النشر: 2020
المجموعة: ScienceDirect (Elsevier - Open Access Articles via Crossref)
نوع الوثيقة: article in journal/newspaper
اللغة: English
DOI: 10.1016/j.jallcom.2020.156433
الاتاحة: http://dx.doi.org/10.1016/j.jallcom.2020.156433
https://api.elsevier.com/content/article/PII:S0925838820327973?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0925838820327973?httpAccept=text/plain
Rights: https://www.elsevier.com/tdm/userlicense/1.0/
رقم الانضمام: edsbas.CE956F15
قاعدة البيانات: BASE
الوصف
DOI:10.1016/j.jallcom.2020.156433