Academic Journal
Study on mechanism of refining and modifying in Al–Si–Mg casting alloys with adding rare earth cerium
| العنوان: | Study on mechanism of refining and modifying in Al–Si–Mg casting alloys with adding rare earth cerium |
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| المؤلفون: | Xiaoming Cui, Zhenwang Wang, Hao Cui, Chuang Meng, Pucun Bai, Zhaoxin Du, Xueping Zhao, Jie Li |
| المصدر: | Materials Research Express, Vol 10, Iss 8, p 086511 (2023) |
| بيانات النشر: | IOP Publishing |
| سنة النشر: | 2023 |
| المجموعة: | Directory of Open Access Journals: DOAJ Articles |
| مصطلحات موضوعية: | Al–Si–Mg alloy, cerium, microstructure, mechanism of refinement and modification, Materials of engineering and construction. Mechanics of materials, TA401-492, Chemical technology, TP1-1185 |
| الوصف: | In this paper, Al-7%Si-0.6%Mg-X%Ce (X = 0, 0.1 and 0.2) casting alloys were prepared by vacuum induction furnace. Using optical microscopy (OM), x-ray diffractometer (XRD), scanning electron microscopy (SEM), energy spectrometry (EDS), differential scanning calorimetry (DSC) and transmission electron microscopy (TEM), the microstructures of the experimental alloys were studied, and the mechanism of refinement and modification of the alloy were discussed. Results show that for Al-Si alloy, AlCeSi _2 is formed by adding cerium element into aluminum alloy. Furthermore, with the increase of cerium addition, α - Al dendrite arms decrease, the AlCeSi _2 was formed, and the growth of iron-rich phase was hindered, respectively. Also, the areas of eutectic of α -Al + Si were decreased, due to the supercooling increasing of the alloys. In addition, the α -Al grains were refined, because existing of heterogeneous nucleation core supplied by AlCeSi _2 , and component supercooling caused by cerium adding. Moreover, the formation of AlCeSi _2 consumed to some silicon elements, which leaded to size and amount reduction of eutectic silicon. The formation of high-density stacking fault can induce silicon modified, and the formed high-density stacking fault was produced by cerium as impurity element into silicon. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| تدمد: | 2053-1591 |
| Relation: | https://doi.org/10.1088/2053-1591/acece0; https://doaj.org/toc/2053-1591; https://doaj.org/article/21e31bcc971e4dbaba3e7731bcf31846 |
| DOI: | 10.1088/2053-1591/acece0 |
| الاتاحة: | https://doi.org/10.1088/2053-1591/acece0 https://doaj.org/article/21e31bcc971e4dbaba3e7731bcf31846 |
| رقم الانضمام: | edsbas.CDE55505 |
| قاعدة البيانات: | BASE |
Full Text Finder | تدمد: | 20531591 |
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| DOI: | 10.1088/2053-1591/acece0 |