Academic Journal
The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications
| العنوان: | The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications |
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| المؤلفون: | Toomey, B., Cherkaoui, Karim, Monaghan, Scott, Djara, Vladimir, O'Connor, Éamon, O'Connell, D., Oberbeck, L., Tois, E., Blomberg, T., Newcomb, S. B., Hurley, Paul K. |
| بيانات النشر: | Elsevier B.V. |
| سنة النشر: | 2012 |
| المجموعة: | University College Cork, Ireland: Cork Open Research Archive (CORA) |
| مصطلحات موضوعية: | ALD, Capacitor, Dynamic random access memory (DRAM), High-k, Metal–insulator–metal (MIM), HfD-04 |
| الوصف: | Hafnium erbium oxide (HfErOx) thin films were formed using atomic layer deposition. The effect of using different Hf:Er pulse ratios on the electrical and structural properties of the HfErOx thin films (∼9 nm) in metal–insulator–metal (MIM) capacitor structures have been investigated and comparisons made between as-deposited and annealed samples. We report the stabilisation of the higher dielectric constant (k) tetragonal/cubic phase by optimising the Hf:Er pulse ratio. The dielectric properties post thermal anneal at 500 °C were studied. A leakage current in the order of ∼1 × 10−8 (A/cm2) at a voltage of 1 V and a capacitance equivalent thickness of ∼1.4 nm have been achieved post thermal annealing at 500 °C. |
| نوع الوثيقة: | article in journal/newspaper |
| وصف الملف: | application/pdf |
| اللغة: | English |
| تدمد: | 0167-9317 |
| Relation: | info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/09/IN.1/I2633/IE/Investigating Emerging Non-Silicon Transistors (INVENT)/; Toomey, B., Cherkaoui, K., Monaghan, S., Djara, V., O’Connor, É., O’Connell, D., Oberbeck, L., Tois, E., Blomberg, T., Newcomb, S. B. and Hurley, P. K. (2012) 'The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications', Microelectronic Engineering, 94, pp. 7-10. doi:10.1016/j.mee.2012.01.001; 10; Microelectronic Engineering; http://hdl.handle.net/10468/13329; 94 |
| DOI: | 10.1016/j.mee.2012.01.001 |
| الاتاحة: | http://hdl.handle.net/10468/13329 https://doi.org/10.1016/j.mee.2012.01.001 |
| Rights: | © 2012, Elsevier B.V. All rights reserved. This manuscript version is made available under the CC BY-NC-ND 4.0 license. ; https://creativecommons.org/licenses/by-nc-nd/4.0/ |
| رقم الانضمام: | edsbas.CDC60DAF |
| قاعدة البيانات: | BASE |
| تدمد: | 01679317 |
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| DOI: | 10.1016/j.mee.2012.01.001 |